Ultrasensitive and Broadband MoS₂ Photodetector Driven by Ferroelectrics

Abstract

A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 10(12) Jones and 2570 A W(-1), respectively, at 635 nm with ZERO gate bias. E(g) of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).

Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS2/Si Heterojunction

“…In addition, the lateral photovoltage balance values remain nearly constant for each laser power without depending on the chopper frequency, and V max increases gradually until becoming saturated with increasing laser power, as shown in Figure 4f, which is consistent with the LPE results. More importantly, it is noteworthy that the response time of this heterojunction is much faster than those of most reported MoS 2 ‐based photodetectors 10, 11, 12, 30, 59, 60, 61, 62, 63. Though ultrafast and stable photoresponse with no degradation, as well as resistance capacitance (RC)‐limited bandwidth, of the optoelectric devices is one of the basic requirements for applications in high‐speed optical communications, until now, the frequency of the modulated laser has been lower than 4000 Hz in most of the previously reported nano‐PDs, which will hinder their application in dynamic real‐time detection of the optical signal.…”

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

“…In addition, the other important optoelectronic parameters,38, 39, 40 such as detectivity and external quantum efficiency, were also extracted from the photodetectors fabricated on the ReS 2 , ReSe 2 , and ReS 2 /ReSe 2 heterojunctions; the plotted data is provided in the Supporting Information chapter (Figure S5, Supporting Information). Finally, for performance comparison of the gate‐controllable ReS 2 /ReSe 2 heterojunction photodetector with other devices, we plotted the photoresponsivity values obtained in this study and previous studies for vdW photodetectors4, 5, 6, 7, 8, 9, 10, 11, 13, 23, 41, 42, 43 in Figure 4k. Our gate‐controllable ReS 2 /ReSe 2 heterojunction photodetector (blue dotted line) exhibited relatively high photoresponsivity values over a broad range of wavelengths, compared to other vdW photodetectors.…”

“…Since the graphene photodetector was first implemented in 2009,1 various van der Waals (vdW) materials, such as graphene,1, 2, 3, 4 transition metal dichalcogenides (TMDs),5, 6, 7, 8, 9, 10, 11, 12 and black phosphorus (BP),13, 14, 15 have been utilized to achieve high‐performance photodetectors with high photoresponsivity and a wide detection range. In the early graphene‐based photodetectors, photodetection in a wide range from ultraviolet to terahertz wavelengths was possible, owing to the zero‐bandgap nature of graphene 16.…”

Photogating in Low Dimensional Photodetectors

“…Responsivity and response time of part current state‐of‐the‐art low dimensional photodetectors 17, 31, 32, 39, 40, 44, 47, 67, 99, 100, 101, 102, 103, 104. The blue line represents a typical magnitude order of GBP for traditional high‐performance thin‐film photodetectors.…”