2016
DOI: 10.1002/adma.201603266
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Ultrasensitive Pressure Detection of Few‐Layer MoS2

Abstract: Ultrasensitive pressure sensors are constructed with few-layer MoS films. As-designed Fabry-Perot (F-P) sensors exhibit nearly synchronous pressure-deflection responses with a very high sensitivity (89.3 nm Pa ), which is three orders of magnitude higher than those of conventional diaphragm materials (e.g., silica, silver films). This kind of F-P sensor may open up new avenues for 2D materials in biomedical and environmental applications.

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Cited by 108 publications
(91 citation statements)
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“…In addition, SnS 2 can be easily oxidized to SnO x at temperatures above 160 °C, which makes gas sensor vulnerable to issues of long-term stability; [37] Figure S4 in the Supporting Information shows more details about the temperature dependency of this gas response. The response of this SnS 2 gas sensing device to NO 2 was monitored Small 2018, 14,1704116 at 3-100 ppm as shown in Figure 4b. Adsorption of NO 2 molecules to the surface of the SnS 2 nanosheets causes an increase in resistance, since NO 2 is a well-known electron acceptor and SnS 2 is an n-type semiconductor with electrons as a major carrier (see Figure S3, Supporting Information).…”
Section: Chemical Sensorsmentioning
confidence: 99%
See 1 more Smart Citation
“…In addition, SnS 2 can be easily oxidized to SnO x at temperatures above 160 °C, which makes gas sensor vulnerable to issues of long-term stability; [37] Figure S4 in the Supporting Information shows more details about the temperature dependency of this gas response. The response of this SnS 2 gas sensing device to NO 2 was monitored Small 2018, 14,1704116 at 3-100 ppm as shown in Figure 4b. Adsorption of NO 2 molecules to the surface of the SnS 2 nanosheets causes an increase in resistance, since NO 2 is a well-known electron acceptor and SnS 2 is an n-type semiconductor with electrons as a major carrier (see Figure S3, Supporting Information).…”
Section: Chemical Sensorsmentioning
confidence: 99%
“…
in emerging devices, such as highmobility transistors, [5][6][7] versatile optoelectronic devices, [8][9][10] chemical sensing devices, [11][12][13] physical sensing devices, [14] and energy harvesting devices. [15][16][17] First, many basic research outputs on 2D materials have been successfully achieved using atomically thin layered materials exfoliated from their bulk counterparts, [18][19][20] and there have also been many efforts to synthesize 2D materials directly on a substrate by vapor phase depositions for use in practical applications.
…”
mentioning
confidence: 99%
“…Smart monitoring system, as an emerging need in all aspects of our life, has sprung up, especially in the last 5 years . Sensing pressures, chemicals, external stimulations, and other complex environmental information (light, surfaceness, atmosphere, potential, magnetic field, etc. ) have attracted more attention than ever.…”
Section: Introductionmentioning
confidence: 99%
“…Transition‐metal dichalcogenides (TMDs) 2H‐MX 2 (M = Mo, W, etc. ; X = S, Se, Te) have emerged as exciting material systems because of their ease of fabrication , unique optical properties , and electronic structure . TMDs are composed of X‐M‐X tri‐atomic sheets in which each tri‐atomic monolayer has a sandwiched structure with a plane of transition metal M atoms covalently bonded to and sandwiched between two planes of chalcogenide X atoms.…”
Section: Introductionmentioning
confidence: 99%