Ultrashallow TiC Source/Drain Contacts in Diamond MOSFETs Formed by Hydrogenation-Last Approach

Jingu, Yoshikatsu; Hirama, Kazuyuki; Kawarada, Hiroshi

doi:10.1109/ted.2010.2043311

Cited by 48 publications

(22 citation statements)

References 16 publications

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“…The conditions used for the growth of the high-quality homoepitaxial diamond film are given elsewhere in detail [27]. After cleaning in a mixture of sulfuric acid and nitric acid (3:1) at 200°C for 30 min, the diamond surface was exposed to a remote hydrogen plasma at ∼640°C for 5 min [28]. This hydrogen-termination treatment provides an electroconductive surface that prevents electrostatic charging upon EB irradiation.…”

Section: Methodsmentioning

confidence: 99%

Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing

et al. 2018

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The simultaneous control of the number and position of negatively charged nitrogen-vacancy (NV) centers in diamond was achieved. While single near-surface NV centers are known to exhibit outstanding capabilities in external spin sensing, trade-off relationships among the accuracy of the number and position, and the coherence of NV centers have made the use of such engineered NV centers difficult. Namely, low-energy nitrogen implantation with lithographic techniques enables the nanoscale position control but results in degradation of the creation yield and the coherence property. In this paper, we show that low-energy nitrogen ion implantation to a 12 C(99.95%)-enriched homoepitaxial diamond layer using nanomask is applicable to create shallow NV centers with a sufficiently long coherence time for external spin sensing, at a high creation yield. Furthermore, the NV centers were arranged in a regular array so that 40% lattice sites contain single NV centers. The XY8-k measurements using the individual NV centers reveal that the created NV centers have depths from 2 to 12nm, which is comparable to the stopping range of nitrogen ions implanted at 2.5keV. We show that the position-controlled NV centers are capable of external spin sensing with a ultra-high spatial resolution.

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Section: Methodsmentioning

confidence: 99%

Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing

et al. 2018

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“…The other studies of R C at RT resulted in various values of ~110 -6 , ~110 -5 , 0.04 cm 2 [18][19][20]. Barrier heights were not evaluated in the later three studies [18][19][20].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface

Kono

Teraji

Takeuchi

et al. 2017

Diamond and Related Materials

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“…For surface hydrogenation, hydrogen ambient and a relatively high temperature (500–600 °C) are essential. However, hydrogenation can be achieved by hydrogen plasma or hydrogen radicals at a temperature of less than 300 °C 8.…”

Section: Variety Of Surface Terminationsmentioning

confidence: 99%

Diamond electrolyte solution gate FETs for DNA and protein sensors using DNA/RNA aptamers

Kawarada

Ruslinda

2011

Physica Status Solidi (a)

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For DNA and protein detection, we have analyzed DNA/RNA immobilized biosensors based on diamond field effect transistors (FETs), where several types of atomic or molecule termination have been realized on their surfaces. Amine termination and carboxyl termination necessary for biomolecule immobilization can be formed directly on the diamond surfaces resulting in the immobilization of short DNA/RNA within 5 nm from the surface. Owing to the high areal capacitance of a liquid electric double layer capacitor and a solid channel capacitor, the change in the surface charge caused by the hybridization of DNA/RNA and the protein binding to DNA/RNA aptamers can be efficiently detected. The charge of surface termination groups such as NH þ 3 , O À , COO À affects the suppression of nonspecific binding. The detection of biomolecules such as one-base mismatch of DNA and proteins that is unaffected by nonspecific binding can be realized as a result.

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Ultrashallow TiC Source/Drain Contacts in Diamond MOSFETs Formed by Hydrogenation-Last Approach

Cited by 48 publications

References 16 publications

Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing

Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing

Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface

Diamond electrolyte solution gate FETs for DNA and protein sensors using DNA/RNA aptamers

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