Ultrathin Anion Conductors Based Memristor

Abstract

realization of diffusive memristor hinges on the ion dynamics inside channel and electrode materials, depicting resistive switching characteristics, especially for metal migrations in electrochemical metallization memory (ECM). [17] The intrinsic structure and property of channel dielectrics would be changed by active electrode material due to inevitable doping in electroforming process. However, the vertical thickness of channel materials may also restrain the switching response and ions transport efficiency, considering the ions coupling effect and fabricating strategy. Feasible attempts are reported to explore synergistic nonmetal ion dynamic and channel thickness in monolayer and bilayer transition metal dichalcogenides (TMDCs) memristors by means of depleted grain boundary [18,19] and migration of vacancies, [20] which inspire exploration on intrinsic conduction mechanism for 2D materials in lower spatiotemporal region even sub-nanoscale. Layered double hydroxides (LDHs) can be presented by gen-•mH 2 O (M represents metal cations, and A represents anions) are unique specie of the 2D materials with positively charged layers and exchangeable anions in subatomic interlayer space, also exhibiting unique electronic features and memory effect. [21,22] Attributing to abundant hydroxyl groups covalently bonded within 2D brucite layer, LDHs are considered to be candidates for hydroxyl ion conductors with high conductivity, as the confinement of electrons in 2D ultrathin region facilitates their compelling electronic properties, leading to ideal state for manufacturing electronic devices. [23][24][25] The memory effect is revealed by the ability of reconstitution, which allows LDHs to recover from ex-LDH oxides, demonstrating the robust stability with respect to thermal change. [26,27] Thanks to its large specific surface area and rich element composition, 2D fabrication process could be achieved from lamellar LDHs to exfoliated nanosheets. [28,29] Moreover, arising from phase engineering, [30] doping engineering, [31] stress engineering confinement effects, [32] the ion transport efficiency, and memory behavior within the LDH plane are further improved, indicating its great potential for constructing relative nonvolatile devices.Herein, we report the MgAl LDH based memristor with abnormal resistive switching behavior for the first time based on the formation of conductive channels (CCs) in interlayer space. Pristine MgAl LDH were successfully synthesized and furthermore exfoliated into few layered flakes. To simply explore the

Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices

“…Memristive technologies are considered promising candidates for the development of alternative memory devices for data storage and for the development of computing architectures beyond von Neumann architecture, paving the way for in-memory computing and neuromorphic systems. − Redox-based memristive devices are essentially two-terminal metal–insulator–metal cells in which the internal resistance state can be modulated by ionic effects under the action of an external electrical stimulation. − In particular, resistive switching mechanism underlaying memristive functionalities in electrochemical metallization cells (ECMs) relies on the formation/dissolution of a metallic filament that bridges the two electrodes . In this case, a positive voltage applied to the electrochemically active electrode can cause the dissolution of metal atoms to form metal ions that start to migrate toward the counter electrode under the action of the applied electric field.…”

2D materials and van der Waals heterojunctions for neuromorphic computing

“…LDHs are considered to be candidates for the OH − ion conductors due to their high concentration of hydroxyl groups covalently bonded within the 2D brucite layer. Xiong et al also reported a dual resistive switching behavior in the MgAl LDH-based memristor, as shown in figure 3(d), utilizing the formation of anion CFs [207]. In summary, the CFs formed in 2D materials can reduce the scale of neuromorphic devices to the atomic level, which represents their potential for an ultrahigh density of data storage for neuromorphic applications.…”

“…However, the highly anisotropic electrical and ionic transport characteristics and the large interlayer space of the 2D materials achieve the phase change without waste heat. The ions are inserted into the oxide layer by an electric field and make the phase transition, which is different from the anion migration for forming CFs [207]. For example, the energy consumption per unit volume of the electrostatically driven phase transition in monolayer MoTe 2 at room temperature is 9% of the thermally driven phase transition in Ge 2 Sb 2 Te 5 [209] according to the density functional theory-based calculations.…”

High‐Performance Memristor Based on 2D Layered BiOI Nanosheet for Low‐Power Artificial Optoelectronic Synapses

“…[2,3] Recently, many efforts have been devoted to achieve RS behaviors in 2D materials with layered structure and atomically thin thickness. [4,5] Such 2D materials have been proven to be good candidates for use in memristors, benefited from their intrinsically thin thickness, outstanding electronic properties, and stable and reliable RS behaviors. [6,7] These memristive devices based on 2D materials exhibit not only diverse RS behaviors but also multiple synaptic functionalities, including long-term potentiation (LTP), long-term depression (LTD) plasticity, paired-pulse facilitation (PPF), and spike-timing dependent plasticity (STDP).…”