Ultrathin oxide films deposited using electron cyclotron resonance sputter

Amazawa, Takao; Ono, Takahito; Shimada, Masaru; Matsuo, Seitaro; Oikawa, Hideo

doi:10.1116/1.590897

Cited by 33 publications

(21 citation statements)

References 6 publications

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“…On the other hand, because the ECR plasma method enables the generation of high-density plasma at low pressure, it is very useful for low-temperature fabrication processes of high-k films, such as sputtering deposition, oxidation and nitridation (6)(7)(8). Therefore, in these oxidation methods, because there is no high thermal energy for the generation of the oxygen molecule, it could be possible to oxidize at low temperatures.…”

Section: Methodsmentioning

confidence: 98%

The Approach for Direct Stacking of High-k Dielectrics on Si

Nagasato¹,

Iwazaki²,

Hasumi³

et al. 2007

ECS Trans.

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We present the approach for direct stacking of high-k dielectrics on Si. For the reduction of equivalent oxide thickness (EOT), the fabrication method of high-k/Si structure in which interfacial SiO 2 layer scarcely formed was proposed. In this method, high-k films were fabricated by ultrahigh vacuum sputtering of metal thin films followed by post-oxidation. For the oxidation of metal films such as Hf, Zr or Al, using plasma oxidation methods at the lowtemperature improves the electrical properties of high-k/Si. HfO 2 /Si structures fabricated by plasma oxidation in the Kr/O 2 mixed ambient had the calculated k-value of 25.1 with the thickness of interfacial layer of 0.2nm. Furthermore, because the mutual diffusion at the interface was suppressed, interface quality was improved by low-temperature oxidation. In this study, using a suitable oxidation method and condition for each metal leads to the fabrication of an ideal stacking structure of high-k dielectrics on Si.

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Section: Methodsmentioning

confidence: 98%

The Approach for Direct Stacking of High-k Dielectrics on Si

Nagasato¹,

Iwazaki²,

Hasumi³

et al. 2007

ECS Trans.

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“…[18][19][20] We refer to these modes as the metal and oxide modes; we named them to reflect the corresponding conditions of the target surface. [18][19][20] We refer to these modes as the metal and oxide modes; we named them to reflect the corresponding conditions of the target surface.…”

Section: Methodsmentioning

confidence: 99%

Electron-cyclotron-resonance sputtering apparatus for multilayered optical bandpass filters applicable to wavelength division multiplexing

Jin

Shimada

Ono

2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Fabrication and characteristics of rugate filters deposited by the TSH reactive sputtering methodA new apparatus for fabricating narrow-bandpass multilayer filters applicable to wavelength-division multiplexing and the development of this apparatus are described. Electron-cyclotron-resonance (ECR) sputtering with two plasma sources is used in the apparatus. The plasma is produced from a mixture of Ar and O 2 gas and, with a metallic target, generates stable "metal-mode" deposition. That is, the target is sputtered in a metallic state, and this is followed by oxide-film formation, which is enhanced by exposure of the substrate to the ECR plasma. SiO 2 and Ta 2 O 5 films formed by ECR sputter-deposition in metal-mode are suitable for optical multilayer filters because this form of deposition provides surface smoothness, low loss, and stability of refractive index. Uniformity of deposition is good, with variations in thickness over a 200 mm diameter within ±0.43% for SiO 2 and ±0.27% for Ta 2 O 5 . The refractive indices of the SiO 2 and Ta 2 O 5 films are 1.46 and 2.10 at a wavelength of 1550 nm. Surfaces are very smooth, with typical root-mean-square roughness values of only 0.13 nm for the Ta 2 O 5 film and 0.19 nm for the SiO 2 film. We describe how we deposited multilayered structures consisting of 43 layers on an optical glass substrate, alternately SiO 2 and Ta 2 O 5 , and thus fabricated a narrow-band bandpass filter. We demonstrate a thin full width at half maximum of only 0.224 nm and bandpass filtering uniformity within ±0.1% over the whole 100 mm diameter substrate.

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“…Additionally, it shows that the ECR-sputtered TaN film was deposited with a uniform thickness on an atomic scale, as suggested from previous reports. 12,14 Moreover, it means that a thick low-resistivity metal film can be used in future MOS devices.…”

Section: Reduction Of Effective Dielectric Constant Of Gate Insulatormentioning

confidence: 99%

Reduction of effective dielectric constant of gate insulator by low-resistivity electrodes

Saito

Jin

Shimada

2002

Applied Physics Letters

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Ultrathin oxide films deposited using electron cyclotron resonance sputter

Cited by 33 publications

References 6 publications

The Approach for Direct Stacking of High-k Dielectrics on Si

The Approach for Direct Stacking of High-k Dielectrics on Si

Electron-cyclotron-resonance sputtering apparatus for multilayered optical bandpass filters applicable to wavelength division multiplexing

Reduction of effective dielectric constant of gate insulator by low-resistivity electrodes

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