Ultrathin Pt and Mo films on Al1–Sc N: an interface investigation

Ding, Yu; Hou, Xiang-Yu; Jin, Tengyu; Wang, Yanan; Liu, Xu; Yuan, Lei; Wang, Yihe; Duan, Sisheng; Geng, Xiangrui; Wang, Meng; Mao, Jingyu; Zhang, Yuanyuan; Tang, Peter Torben; Li, Minghua; Lin, Hua‐Tay; Zhu, Yao; Teo, Siewlang; Zhu, Qiaoming; Lin, Ming; Chen, Wei

doi:10.1016/j.apsusc.2023.157921

Cited by 5 publications

References 42 publications

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Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study

Rehm,

Baumgarten,

Guido

et al. 2024

Physica Rapid Research Ltrs

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Aluminum scandium nitride (Al1−xScxN) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN with Sc, the bonds in the polar AlN structure are weakened, which enables ferroelectric switching below the dielectric breakdown field. However, one disadvantage of Sc doping is that it increases the material's tendency toward oxidation. Herein, the oxidation process of tungsten‐capped and uncapped Al0.83Sc0.17N thin films is investigated by hard X‐ray photoelectron spectroscopy (HAXPES). The samples is exposed to air for either 2 weeks or 6 months. HAXPES spectra indicate the replacement of nitrogen by oxygen and the tendency of oxygen to favor oxidation with Sc rather than Al. The appearance of an N2 spectral feature thus can be directly related to the oxidation process. An oxidation model that mimics these spectroscopic results of the element‐specific oxidation processes within Al1−xScxN is presented. Finally, in operando HAXPES data of uncapped and capped AlScN‐capacitor stacks are interpreted using the proposed model.

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Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study

Rehm,

Baumgarten,

Guido

et al. 2024

Physica Rapid Research Ltrs

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Bismuth as a buffer layer for metal contact with silicon carbide studied by In situ photoelectron spectroscopy

Geng,

Ding,

Duan

et al. 2024

Surface Science

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Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities

Wang,

Yang,

Liu

et al. 2024

Applied Physics Letters

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The recent demonstration of ferroelectricity in nitride materials has enabled a broad spectrum of applications across electronics, optoelectronics, photovoltaics, photonics, ferroelectrics, acoustoelectronics, and quantum devices and systems. Ensuring that nitride ferroelectrics meet the rigorous demands of modern microelectronics and photonics necessitates addressing significant challenges, such as large coercive fields, low endurance, poor stability, high leakage current, and high optical loss. In this perspective, we review the latest advancements, highlight the distinctive properties and notable achievements of nitride ferroelectrics, and delve into their origins, material synthesis, operational mechanisms and devices. Moreover, we highlight the principal obstacles faced by nitride ferroelectrics in practical applications. Finally, we discuss potential solutions, future research directions, and the prospects for further advancements in this rapidly evolving domain.

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Ultrathin Pt and Mo films on Al1–Sc N: an interface investigation

Cited by 5 publications

References 42 publications

Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study

Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study

Bismuth as a buffer layer for metal contact with silicon carbide studied by In situ photoelectron spectroscopy

Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities

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