Ultraviolet Imaging Based on Surface Plasmon Resonance With Azo-Polymer Sensing Layer

Zhang, Xinyu; Wang, Keyi; Ma, Jiajun; Zhang, Qijin; Yan, Ping; Xie, Tian

doi:10.1109/lpt.2015.2421053

Cited by 5 publications

(3 citation statements)

References 15 publications

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“…At the same time, the application domain of ultraviolet plasmonics is highly diverse. It includes biochemical sensing applications [42,43], photodetection [44], nano-imaging [45], material characterization [46], and absorption of radiation [47].…”

Section: Introductionmentioning

confidence: 99%

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Zhou

Руденко

Yuan

2019

Adv Elect Materials

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Optical properties of nodal-line semimetal ZrSiS are studied using first-principles calculations. Frequency-independent optical conductivity is a fingerprint of the infrared optical response in ZrSiS. We find that this characteristic feature is robust with respect to external pressure of up to 10 GPa, yet with the flat region being narrowed with increasing pressure. Upon tensile stress of 2 GPa, the Fermi surface undergoes a topological transition accompanied by a weakening of the interband screening, which reduces the spectral weight of infrared excitations. We also show that the highenergy region is characterized by low-loss plasma excitations at ∼20 eV with essentially anisotropic dispersion. Strongly anisotropic dielectric properties suggest the existence of a hyperbolic regime for plasmons in the deep ultraviolet range. Although the frequencies of high-energy plasmons are virtually unaffected by external pressure, their dispersion can be effectively tuned by strain.

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Section: Introductionmentioning

confidence: 99%

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Zhou

Руденко

Yuan

2019

Adv Elect Materials

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“…A possible advantage of UV plasmons is the matching of their high energy with the electronic transition energy of many organic molecules, thus paving the way for UV plasmonics, 93 UV imaging, 94 DNA sensing, 95 UV absorbers, 96 (Figure 4) is attributed to the combination of bulk charge carriers from interband transitions and surface charge carriers of the TI.…”

confidence: 99%

Optoelectronic devices, plasmonics, and photonics with topological insulators

2017

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Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from Terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications and the challenges of the emerging fields of topological photonics and thermoplasmonics are discussed.

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“…While the band structure of PtTe 2 has been explored comprehensively 5 , along with the Dirac plasmons (collective density excitations) in the infrared range of the electromagnetic spectrum 18 , the high-energy excitations in PtTe 2 still remain unexplored. The comprehension of the excitation spectrum of collective modes in the visible-ultraviolet is crucial to de-vise broadband photodetectors 19,20 , ultraviolet-imaging applications 21 and broadband plasmonic devices. 22,23 Monolayer PtTe 2 has the smallest energy band gap in the PtX 2 class of materials 24 , offering it an advantage over the other members for applications in nano-electronics.…”

Section: Introductionmentioning

confidence: 99%

Broadband excitation spectrum of bulk crystals and thin layers of PtTe2

et al. 2019

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We explore the broadband excitation spectrum of bulk PtTe2 using electron energy loss spectroscopy and density functional theory. In addition to infrared modes related to intraband 3D Dirac plasmon and interband transitions between the 3D Dirac bands, we observe modes at 3.9, 7.5 and 19.0 eV in the ultraviolet region. The comparison of the excitation spectrum with the calculated orbital-resolved density of states allows us to ascribe spectral features to transitions between specific electronic states. Additionally, we study the thickness dependence of the high-energy plasmon in the PtTe2 thin films. We show that, unlike graphene, the high-energy plasmon in PtTe2 thin film gets red-shifted by ∼2.5 eV with increasing thickness. arXiv:1808.08947v1 [cond-mat.mes-hall]

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Ultraviolet Imaging Based on Surface Plasmon Resonance With Azo-Polymer Sensing Layer

Cited by 5 publications

References 15 publications

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Optoelectronic devices, plasmonics, and photonics with topological insulators

Broadband excitation spectrum of bulk crystals and thin layers of PtTe2

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