Ultraviolet laser damage mechanisms of amorphous InGaZnO<sub>4</sub> thin films

Yao, Jian Ke; Fan, Yining; Fan, Ping

doi:10.1364/ome.9.002545

Cited by 5 publications

(5 citation statements)

References 27 publications

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“…It shows that no apparent peak shift exists with the change of the annealing method for the WZTO thin film. These clearly demonstrated that no evident phase transformation and lattice expansion exist during laser scanning annealing for the as-deposited WZTO thin films, which is due to the stable amorphous structures of WZTO thin films within the laser scanning annealing …”

Section: Resultsmentioning

confidence: 94%

“…These clearly demonstrated that no evident phase transformation and lattice expansion exist during laser scanning annealing for the as-deposited WZTO thin films, which is due to the stable amorphous structures of WZTO thin films within the laser scanning annealing. 32 FTIR spectroscopy is used to confirm the effect of different annealing processes on the organic functional groups and the chemical bonds in the spectrum of the WZTO thin film, as shown in Figure 3. For all samples, the broad peak in the range from 3250 to 3750 cm −1 can be accounted for the −OH stretching modes, which is due to the water molecules in the thin film.…”

Section: Resultsmentioning

confidence: 99%

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Enhancing the Performance of Solution-Processed Thin-Film Transistors via Laser Scanning Annealing

Peng

Yuan

et al. 2020

ACS Appl. Electron. Mater.

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In this article, laser scanning annealing is used for the fabrication of solution-processed tungsten–zinc–tin-oxide thin-film transistors (WZTO TFTs) with low temperatures and fast processing. The high-transient intensity of the scanning laser is beneficial to the effective conversion of precursors to metal–oxide lattices, which is also verified by the X-ray photoelectron spectroscopy analysis. Moreover, no apparent phase transformation and lattice expansion exist during laser irradiation of stable amorphous structures of a-WZTO thin films, as observed from the results of X-ray diffraction, Raman scattering spectroscopy, and transmission electron microscopy. Based on laser scanning techniques, the large optical band gap (3.88 eV) is an important factor to realize a high optical performance of WZTO TFTs. The solution-processed WZTO TFT with laser scanning annealing exhibits much better performance with high mobility (up to 4.99 cm2 V–1 s–1), compared to that with thermal annealing (1.27 cm2 V–1 s–1). More importantly, this method is applicable for a wide range of metal–oxide semiconductors and polymer substrates, by solving the incompatibility between solution-processed metal–oxide semiconductors and polymer substrates because of high processing temperatures. Therefore, it shows tremendous potential to be applicable for a wide range of sensors, displays, and circuits. These results demonstrated that the laser scanning annealing provides a promising tool to simplify the fabrication of low-temperature polycrystalline oxide TFTs, when simultaneously utilizing the metal–oxide–semiconductor TFT and low-temperature polycrystalline silicon TFT processes with low cost and high yield.

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Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Enhancing the Performance of Solution-Processed Thin-Film Transistors via Laser Scanning Annealing

Peng

Yuan

et al. 2020

ACS Appl. Electron. Mater.

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“…A 0.2 M In 2 O 3 solution was prepared by dissolving indium nitrate hydrate ((In(NO) 3 •nH 2 O), Sigma-Aldrich, Tianhe District, Guangzhou, China) in deionized water. The Ln:In 2 O 3 precursor solutions were synthesized by dissolving indium nitrate hydrate ((In(NO) 3 •nH 2 O), Sigma-Aldrich, Tianhe District, Guangzhou, China) and lanthanides nitrate hydrate (Pr/Tb(NO) 3 •nH 2 O, Aladdin, Industrial Co., Shanghai, China) in deionized water, which was optimized to the total concentration of metal ion of 0.2 M and In/Ln molar ratio of 19:1. All the precursor solutions were stirred vigorously for 12 h at room temperature and filtered through a 0.22 µm syringe filter before spin-coating.…”

Section: Experimental Section 21 Precursor Solutionsmentioning

confidence: 99%

“…Oxide semiconductors, such as InGaZnO 4 (IGZO) [ 1 , 2 , 3 , 4 , 5 ], have drawn considerable attention for the advantages of relatively high mobility, large-area processability, good uniformity, high transparency to visible light, etc. [ 6 ] In particular, the extremely low off current ( I off ) makes it attractive in energy-saving devices that require long stand-by time [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides

Lan

Ding

et al. 2022

Nanomaterials

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The applications of thin-film transistors (TFTs) based on oxide semiconductors are limited due to instability under negative bias illumination stress (NBIS). Here, we report TFTs based on solution-processed In2O3 semiconductors doped with Pr4+ or Tb4+, which can effectively improve the NBIS stability. The differences between the Pr4+-doped In2O3 (Pr:In2O3) and Tb4+-doped In2O3 (Tb:In2O3) are investigated in detail. The undoped In2O3 TFTs with different annealing temperatures exhibit poor NBIS stability with serious turn-on voltage shift (ΔVon). After doping with Pr4+/Tb4+, the TFTs show greatly improved NBIS stability. As the annealing temperature increases, the Pr:In2O3 TFTs have poorer NBIS stability (ΔVon are −3.2, −4.8, and −4.8 V for annealing temperature of 300, 350, and 400 °C, respectively), while the Tb:In2O3 TFTs have better NBIS stability (ΔVon are −3.6, −3.6, and −1.2 V for annealing temperature of 300, 350, and 400 ℃, respectively). Further studies reveal that the improvement of the NBIS stability of the Pr4+/Tb4+:In2O3 TFTs is attributed to the absorption of the illuminated light by the Pr/Tb4f n—O2p6 to Pr/Tb 4f n+1—O2p5 charge transfer (CT) transition and downconversion of the light to nonradiative transition with a relatively short relaxation time compared to the ionization process of the oxygen vacancies. The higher NBIS stability of Tb:In2O3 TFTs compared to Pr:In2O3 TFTs is ascribed to the smaller ion radius of Tb4+ and the lower energy level of Tb 4f 7 with a isotropic half-full configuration compared to that of Pr 4f 1, which would make it easier for the Tb4+ to absorb the visible light than the Pr4+.

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“…The effect of LA on metal‐oxide semiconducting films has been gathering increasing attention, leading to numerous published studies of their mechanical and optoelectronic properties as well as combinations of various fabrication approaches and materials . Tsay et al successfully fabricated sol–gel IGZO films and utilized KrF excimer laser annealing in order to examine its impact on the optical, morphological and electrical properties of the layers.…”

Section: Laser Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Ultraviolet laser damage mechanisms of amorphous InGaZnO₄ thin films

Cited by 5 publications

References 27 publications

Enhancing the Performance of Solution-Processed Thin-Film Transistors via Laser Scanning Annealing

Enhancing the Performance of Solution-Processed Thin-Film Transistors via Laser Scanning Annealing

The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

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Ultraviolet laser damage mechanisms of amorphous InGaZnO4 thin films

Cited by 5 publications

References 27 publications

Enhancing the Performance of Solution-Processed Thin-Film Transistors via Laser Scanning Annealing

Enhancing the Performance of Solution-Processed Thin-Film Transistors via Laser Scanning Annealing

The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

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Ultraviolet laser damage mechanisms of amorphous InGaZnO₄ thin films