2015
DOI: 10.1007/s12274-014-0705-2
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Ultraviolet mem-sensors: flexible anisotropic composites featuring giant photocurrent enhancement

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Cited by 27 publications
(30 citation statements)
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“…During the last decades, various studies concerning the control of the nucleation and the growth of ZnO nano/microstructures embedded in polymeric matrices have been reported, with a special emphasis on the particles morphological control and its influence on their physical properties [19,20]. In this context, Chiolerio et al have developed a method to fabricate a mem-sensor in which ZnO wires embedded in a polymeric matrix are ordered to create morphological anisotropy by means of dielectrophoresis [21].…”
Section: Introductionmentioning
confidence: 99%
“…During the last decades, various studies concerning the control of the nucleation and the growth of ZnO nano/microstructures embedded in polymeric matrices have been reported, with a special emphasis on the particles morphological control and its influence on their physical properties [19,20]. In this context, Chiolerio et al have developed a method to fabricate a mem-sensor in which ZnO wires embedded in a polymeric matrix are ordered to create morphological anisotropy by means of dielectrophoresis [21].…”
Section: Introductionmentioning
confidence: 99%
“…Up to now, fl exible UV PDs have been built on many kinds of 1D binary metal oxide nanostructures, including ZnO NWs/nanorods/nanobelts, SnO 2 NWs/nanobelts, TiO 2 nanorods, In 2 O 3 NWs, etc. [60][61][62][63][64][65] transparency and fl exibility. [ 66 ] Figure 1 c shows the currentvoltage ( I-V ) properties of the device with and without bending when the device was exposed to 365 nm UV light and in the dark, respectively, while Figure 1 d shows the photocurrent versus light intensities curves of the device under bending for different cycles.…”
Section: Flexible Binary-oxide-based Pdsmentioning
confidence: 99%
“…ZnO, because of its electrical and photoresponsive properties, has been also integrated in various electronic and optoelectronic devices . UV photodetectors, three‐terminal field effect transistors with different gate structures non‐volatile memories, light emitting diodes have been proposed, showing the importance of the integration of ZnO nanostructured materials on microelectronic chips.…”
Section: Introductionmentioning
confidence: 99%