Ultraviolet Photodetection Properties of a Pt Contact on a Mg0.1Zn0.9O/ZnO Composite Film

Mridha, S.; Ghosh, Rituparna; Basak, Durga

doi:10.1007/s11664-007-0272-8

Cited by 10 publications

(4 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Sah-Noyce-Shockley formula for a classical p-n junction give an ideality factor value between 1 and 2 [49]. However, the theoretical model cannot account for the ideality factors greater than 2 that were found in our case [50]. Table 3 shows the obtained ideality factor that depends on corrosion time.…”

Section: Optical Electrochemical and Electrical Propertiesmentioning

confidence: 66%

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

et al. 2021

View full text Add to dashboard Cite

The heterojunction based on n-TiO2 nanolayer/p-CuMnO2 thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO2 nanolayer, which was grown on titan foil by thermal oxidation (Ti-TiO2). The second step consisted of CuMnO2 thin film deposition onto the surface of Ti-TiO2 using the Doctor Blade method. Techniques such as X-ray diffraction, UV-VIS analysis, SEM, and AFM morphologies were used for the investigation of the structural and morphological characteristics of the as-synthesized heterostructures. The Mott–Schottky analysis was performed in order to prove the n-TiO2/p-CuMnO2 junction. The I-V measurements of the n-TiO2 nanolayer/p-CuMnO2 thin film heterostructure confirm its diode characteristics under dark state, UV and visible illumination conditions. The obtained heterojunction, which is based on two types of semiconductors with different energy band structures, improves the separating results of charges, which is very important for high-performance UV photodetectors.

show abstract

Section: Optical Electrochemical and Electrical Propertiesmentioning

confidence: 66%

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

et al. 2021

View full text Add to dashboard Cite

show abstract

“…So no recombination process is expected in the space charge region. Besides, when recombination processes are driven by defects or interface states, n becomes higher than unity which indicates that the junction is far from being ideal [31]. Such high value of ideality factor, therefore, is attributed to the recombination of charge carriers during multistep tunneling through the interface states at the heterojunction.…”

Section: Resultsmentioning

confidence: 99%

Single In _x Ga_1−xAs nanowire/p-Si heterojunction based nano-rectifier diode

et al. 2017

View full text Add to dashboard Cite

Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In Ga As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

show abstract

“…16 However, this theory does not explain η > 2. This is due to the presence of surface and interface states where recombination can occur 17 or due to a coupled defect level recombination, 18,19 thus making the diode non-ideal. However these theories do not explain the case of η > 6 as obtained in our case.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependent electrical behaviour of Cu2SnS3 films

Dias

Krupanidhi

2014

AIP Advances

View full text Add to dashboard Cite

The temperature dependent electrical properties of the dropcasted Cu2SnS3 films have been measured in the temperature range 140 K to 317 K. The log I versus √V plot shows two regions. The region at lower bias is due to electrode limited Schottky emission and the higher bias region is due to bulk limited Poole Frenkel emission. The ideality factor is calculated from the ln I versus V plot for different temperatures fitted with the thermionic emission model and is found to vary from 6.05 eV to 12.23 eV. This large value is attributed to the presence of defects or amorphous layer at the Ag / Cu2SnS3 interface. From the Richardson's plot the Richardson's constant and the barrier height were calculated. Owing to the inhomogeneity in the barrier heights, the Richardson's constant and the barrier height were also calculated from the modified Richardson's plot. The I-V-T curves were also fitted using the thermionic field emission model. The barrier heights were found to be higher than those calculated using thermionic emission model. From the fit of the I-V-T curves to the field emission model, field emission was seen to dominate in the low temperature range of 140 K to 177 K. The temperature dependent current graphs show two regions of different mechanisms. The log I versus 1000/T plot gives activation energies Ea1 = 0.367095 − 0.257682 eV and Ea2 = 0.038416 − 0.042452 eV. The log (I/T2) versus 1000/T graph gives trap depths Φo1 = 0.314159 − 0.204752 eV and Φo2 = 0.007425 − 0.011163 eV. With increasing voltage the activation energy Ea1 and the trap depth Φo1 decrease. From the ln (IT1/2) versus 1/T1/4 graph, the low temperature region is due to variable range hopping mechanism and the high temperature region is due to thermionic emission.

show abstract

Ultraviolet Photodetection Properties of a Pt Contact on a Mg0.1Zn0.9O/ZnO Composite Film

Cited by 10 publications

References 34 publications

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Single In _x Ga_1−xAs nanowire/p-Si heterojunction based nano-rectifier diode

Temperature dependent electrical behaviour of Cu2SnS3 films

Contact Info

Product

Resources

About

Ultraviolet Photodetection Properties of a Pt Contact on a Mg0.1Zn0.9O/ZnO Composite Film

Cited by 10 publications

References 34 publications

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Single In x Ga1−x As nanowire/p-Si heterojunction based nano-rectifier diode

Temperature dependent electrical behaviour of Cu2SnS3 films

Contact Info

Product

Resources

About

Single In _x Ga_1−xAs nanowire/p-Si heterojunction based nano-rectifier diode