Ultraviolet Schottky detector based on epitaxial ZnO thin film

ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer

“…3b. A steep cutoff wavelength at $375 nm with a response of $43 A/W is achieved under the bias voltage of 1 V. This responsivity is found to be higher than most results reported in the literature under the same category of device [15][16][17][18]. The high crystal quality of ZnO film, which has a low degree of point defects and negligible carrier traps, is believed to be the cause of the low dark-current and the relatively large responsivity in this MSM-configured UV-detector.…”

Effects of post-annealing on Schottky contacts of Pt/ZnO films toward UV photodetector

“…According to the exponential fitting in nonlinear part, the current decay function can be defined as I = −0.0019 + 0.016 exp (−t/16.8). It can be seen that the fall time is about 17 ns which was faster than the previous reports [19][20][21]. The slow response is usually attributed to the oxygen adsorption at the surface and grain boundaries [22,23].…”

Low dark current and high speed ZnO metal–semiconductor–metal photodetector on SiO2/Si substrate

“…Rise times found in the literature for high speed ZnO based photodetectors are in nanoseconds. 9,10,[15][16][17] The surface band bending related peak observed in PL measurement and the vertically aligned grown ZnO nanorods, observed in SEM inspection, indicating high surface area, therefore high trap density, seem to be responsible for very fast recombination of photogenerated carriers, resulting low photoresponse but very fast time response.…”