ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer

Chen, Mingming; Zhang, Quanlin; Su, Linlin; Su, Yuquan; Cao, Jiashi; Zhu, Yuan; Wu, Tianzhun; Gui, Xuchun; Yang, Chunlei; Xiang, Rong; Tang, Zikang

doi:10.1016/j.materresbull.2012.05.054

Cited by 16 publications

(3 citation statements)

References 20 publications

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“…Before growth, the substrate was annealed at 750°C at vacuum for 15 min and subsequently exposed in oxygen plasma for another 5 min. A designed four-step buffer layers were deposited in sequence for reducing the mismatch between the epitaxial films and the substrate [34]. It is found that the N atoms are hardly doped into the ZnO and BeZnO as the flux of oxygen ðFO 2 Þ is as low as $1.0 sccm (the minimum flux at RF plasma generator normal operating pressures).…”

Section: Methodsmentioning

confidence: 99%

The role of Be incorporation in the modulation of the N doping ZnO

Chen

Zhu

et al. 2015

Journal of Alloys and Compounds

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Section: Methodsmentioning

confidence: 99%

The role of Be incorporation in the modulation of the N doping ZnO

Chen

Zhu

et al. 2015

Journal of Alloys and Compounds

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“…The details of the buffer technique can be found in our previous work. [16] The doping content was controlled by the source temperature, i.e., higher source temperature cor-responds to a higher doping level. In the nitrogen-doped samples, the flow rate was kept constant.…”

Section: Sample Fabricationmentioning

confidence: 99%

Comparative study on beryllium and magnesium as a co-doping element for ZnO:N

Chen

et al. 2016

Chinese Phys. B

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Stable nitrogen doping is an important issue in p-type ZnO research for device applications. In this paper, beryllium and magnesium are systematically compared as a dopant in ZnO to reveal their nitrogen-stabilizing ability. Secondary ion mass spectrum shows that Be and Mg can both enhance the stability of nitrogen in ZnO while Be has a better performance. Zn 2p and O 1s electron binding energies change in both MgZnO and BeZnO thin films. Donor-acceptor luminescence is observed in the BeZnO samples. We conclude that Be is a better co-doping element than Mg for p-type ZnO:N.

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“…ZnO with its direct wide band gap (E g ) of ∼3.37eV and large exciton binding energy of ∼60meV has enormous potential for optoelectronic applications. However, the impediment to realizing such devices is the difficulty to achieve sustainable p-type doping [1,2]. As grown ZnO layers often exhibit n-type conductivity due to the presence of certain native point defects [3,4] acting as unintentional donors, which fully compensate the p-type doping.…”

Section: Introductionmentioning

confidence: 99%

n-ZnO/p-GaN heterojunction ultraviolet (UV) photo detectors with high responsivity and fast response time grown by chemical vapor deposition technique

Saroj¹,

Deb²,

Dhar³

2018

Semicond. Sci. Technol.

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High quality c-axis oriented n-type ZnO epitaxial films are grown on p-type c-GaN/sapphire templates using a chemical vapor deposition technique where metallic zinc is used as the Zn source. n-ZnO/p-GaN heterojunctions were thus formed and show rectifying behaviour with a turn-on voltage of ∼2.4V and a very low leakage current of 1×10 −11 A. Study of the spectral distribution of the photo response properties of these heterostructures shows a maximum at a wavelength of 366nm with a peak responsivity of ∼0.4mA/W at zero bias condition. The peak responsivity increases further with the applied forward bias and reaches ∼191mA/W at 1V. The spectral profile shows a sharp reduction in responsivity for wavelengths larger than ≈400nm, making these devices suitable for application in solar blind UV detection. These devices are also found to show a fast response with a rise/decay time of only a few milliseconds. The study also reveals that the photo-responsivity of these devices depends crucially on the microcrystalline quality of the ZnO layers.

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ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer

Cited by 16 publications

References 20 publications

The role of Be incorporation in the modulation of the N doping ZnO

The role of Be incorporation in the modulation of the N doping ZnO

Comparative study on beryllium and magnesium as a co-doping element for ZnO:N

n-ZnO/p-GaN heterojunction ultraviolet (UV) photo detectors with high responsivity and fast response time grown by chemical vapor deposition technique

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