Ultraviolet, visible, and infrared response of PtSi Schottky-barrier detectors operated in the front-illuminated mode

Chen, C.K.; Nechay, Bettina; Tsaur, B. Y.

doi:10.1109/16.78384

Cited by 46 publications

(30 citation statements)

References 11 publications

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“…5 The cutoff wavelength of these detectors is defined by the Schottky barrier height. To extend this cutoff wavelength, a barrier height lower than that of PtSi/p-Si is needed.…”

Section: Strained Si 1ϫx Ge X /Si For Optoelectronicsmentioning

confidence: 99%

“…The first is the successful demonstration of Schottky barrier detectors for wavelengths below 5.5 µm. 5,6 However, due to its bandgap of 1.12 eV, pure Si-based devices cannot yield high efficiency and wide bandwidth in the infrared range of wavelengths. The second is to utilize Si-based circuits for waveguides, mainly by using the silicon on insulator (SOI) technology, in which the light confinement is achieved by total internal reflection via the large refractive index change at the Si-SiO 2 and Si-air interfaces.…”

Section: Introductionmentioning

confidence: 99%

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Some silicon-based heterostructures for optical applications

Willander

Zhao

Nur

et al. 2005

Journal of Elec Materi

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In this paper, we will present our recent research on the growth and characterization of some Si-based heterostructures for optical and photonic devices. The heterostructures to be discussed are ZnO nanorods on Si, SiO 2 , and other substrates such as SiN and sapphire. We will also consider strained Si 1Ϫx Ge x /Si heterostructures for Si optoelectronics. The performance and functionality extension of Si technology for photonic applications due to the development of such heterostructures will be presented. We will focus on the results of structural and optical characterization in relation to device properties. The structural characterization includes x-ray diffraction for assessment of the crystallinity and stress in the films and secondary ion mass spectrometry for chemical analysis. The optical properties and electronic structure were investigated by using photoluminescence. The device application of these thin film structures includes detectors, lasers, and light emitting devices. Some of the Si-based heterostructures to be presented include devices emitting and detecting up to the blue-green and violet wave lengths.

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“…5 The cutoff wavelength of these detectors is defined by the Schottky barrier height. To extend this cutoff wavelength, a barrier height lower than that of PtSi/p-Si is needed.…”

Section: Strained Si 1ϫx Ge X /Si For Optoelectronicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Some silicon-based heterostructures for optical applications

Willander

Zhao

Nur

et al. 2005

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…In fact, BH fluctuations and inhomogeneity is a concept that is relatively well established, experimentally evidenced and directly imaged using ballistic electron emission microscopy (BEEM) [3]. Moreover, SB diodes based on silicides are being used as photosensitive elements both in the infrared and visible regions for multi-spectral imaging applications [4]. Their advantages include response uniformity, compatibility with the existing Si-integration technology and good spatial homogeneity.…”

Section: Introductionmentioning

confidence: 98%

Effect of temperature and inhomogeneity on the yield of PtSi–n–Si photodetectors

Sellai

Dawson

2006

Journal of Crystal Growth

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“…Thermal imaging devices have important applications in night vision, range finding and infrared imaging for biological and biomedical research [9]. Various kinds of thermal image sensors, such as HgCdTe infrared focal plane arrays [10], PtSi Schottky-Barrier detectors [11], and pixelless imaging devices based on integrated quantum-well infrared photodetector (QWIP) -light-emitting diode (LED) [12] have been developed and studied. Among them, InSb infrared detector focal plane arrays have attracted significant attentions, which is attributed to its good material uniformity, low-cost substrate and broad-band absorption ability in MIR spectral region (E g = 0.23 eV at 77K for InSb).…”

Section: Introductionmentioning

confidence: 99%

Wafer-fused mid-infrared optical up-converter based on MOCVD grown InSb

Ban

Luo

Liu

et al. 2005

Photonic Applications in Devices and Communication Systems

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InSb has been intensively studied in decades and widely used for fabricating high-performance devices because of its good chemical stability, low effective mass, high electron and hole mobility, and narrow band gap. The most important device applications for InSb are in thermal image sensing in the mid-infrared (3-5 µm) spectral range. The industry standard for fabricating InSb-based focal plane arrays for thermal imaging is based on indium bump technology to interconnect the InSb array to a Si-based readout integrated circuit chip. This hybridization is a "one-piece-at-a-time" process and thus time-consuming and costly. An alternative approach is to employ a device that up-converts mid-infrared light to a wavelength below 1 µm, which can then efficiently be detected by Si charged coupled devices. We reported herein such a mid-infrared optical up-converter based on InSb using wafer fusion technology. The up-conversion device consists of an InSb p + nn + photodiode and a GaAs/AlGaAs LED, which were grown separately and wafer-bonded together. Experimental results demonstrated mid-infrared to 0.84 µm up-conversion operation at 77K. The measured LED external efficiency and photodiode responsivity show that an external up-conversion efficiency of 0.093 W/W was obtained. Effects of electrical gain and photon recycling inside this integrated device are discussed.

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Ultraviolet, visible, and infrared response of PtSi Schottky-barrier detectors operated in the front-illuminated mode

Cited by 46 publications

References 11 publications

Some silicon-based heterostructures for optical applications

Some silicon-based heterostructures for optical applications

Effect of temperature and inhomogeneity on the yield of PtSi–n–Si photodetectors

Wafer-fused mid-infrared optical up-converter based on MOCVD grown InSb

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