Understanding Sub-20 nm Breakdown Behavior of Liquid Dielectrics

Virwani, Kumar; Malshe, Ajay P.; Rajurkar, K. P.

doi:10.1103/physrevlett.99.017601

Cited by 26 publications

(14 citation statements)

References 21 publications

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“…These results are consistent with previous STM observations of field emission and dielectric breakdown in liquid octane. 28 Insights into the potential fragmentation routes were provided by density functional theory (Table 1). From these calculations, it emerges that electron capture by DPG greatly reduces the dissociation energy, with the lowest energy occurring for the separation of a benzene molecule from DPG.…”

mentioning

confidence: 99%

Insights into scanning probe high-field chemistry of diphenylgermane

Vasko

Jiang

Chen

et al. 2011

Phys. Chem. Chem. Phys.

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confidence: 99%

Insights into scanning probe high-field chemistry of diphenylgermane

Vasko

Jiang

Chen

et al. 2011

Phys. Chem. Chem. Phys.

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“…Therefore, regardless of the specific mechanism, the tip/NiO interface cannot be the switching region of NiO nanodots, and it is indeed ohmic contact as evidenced by the symmetric I-V characteristics in the pristine state (Figure 4c). The larger work function (5.5 eV) of the Pt/Ir coating of CAFM tip [51] also supports the ohmic contact at the tip/NiO interface. Interestingly, the possible built-in homojunction formed by oxygen migration can be fully responsible for the results.…”

Section: Resultsmentioning

confidence: 69%

Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application

Sun

Wei

Feng

et al. 2016

Adv Elect Materials

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Keywords: memristor, anodic aluminum oxide (AAO), NiO nanodots, intrinsically rectifying-resistive switching, built-in homojunction 2The intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at reverse biases. In this letter, we report for the first time another type of IR-RS that is related to the built-in homojunction. The IR-RS study was usually limited to macroscopic samples with micron-order pad-type electrodes, while this work is on NiO nanodots fabricated with ultrathin anodic-aluminum-oxide templates and acting as nanoscaled analogs of real devices. The NiO nanodots show high storage density and high uniformity, and the IR-RS behaviors are of good device performances in terms of retention, endurance, switching ratio and rectification ratio. The feasibility of the IR-RS for selection device-free memory application has been demonstrated, by calculating the maximum crossbar array size under the worst-case scenario to be 3 Mbit.3

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“…This phenomenon suggests that the BD is related to the confinement of the molecular dielectric in nanoscale gaps and the net applied electric field stress. A model to understand the breakdown behavior in this nanometer regime has been reported in [16]. It was concluded from there-in that the nano-confinement of the dielectric liquid molecular medium masks the effect of the work function of the electrode materials for W and Pt-Ir alloy.…”

Section: Experimental/simulation Detailsmentioning

confidence: 97%