Insights into scanning probe high-field chemistry of diphenylgermane

Abstract

Experiments and simulations are used to elucidate a new class of chemical reactions occurring near the tip-sample interface during high field chemistry of diphenylgermane. Current data during writing and bias dependent growth rate are analyzed, supplemented with data from ionization mass spectrometry, and compared with the simulation results.

High-field chemistry of organometallic precursors for direct-write of germanium and silicon nanostructures

“…This writing study was performed at voltages above the onset voltage, but below voltages that produce irregular features and small explosive discharges. 42,49 As expected, for each precursor, the heights and widths of the lines increase with applied voltage. Deposited volume was calculated from height, width, and write speed as a function of voltage bias for the two precursors.…”

“…40,41 Few initial insights have been proposed for the AFM eld-induced direct-write of germanium nanostructures. 42 A complete picture that involves different inorganic precursors is thus lacking. In this paper, we describe experiments and simulations, which fully explain the reaction mechanism of diphenylgermane and diphenylsilane for the AFM eld-induced direct-write of semiconductor nanostructures.…”

“…2a, Step 1). From reaction kinetics, we propose that some of the eld emitted electrons pass directly into the substrate without interacting with the precursor molecules 42 (Fig. 2a, Step 2).…”

“…2a, Step 2). However, the electrons also drop into the LUMO of the precursor molecule and form a temporary negative ion (TNI) 42 (Fig. 2a, Step 3), which, upon fragmentation, will result in the germanium or silicon nanostructures.…”

Oxidative and carbonaceous patterning of Si surface in an organic media by scanning probe lithography

“…To clarify the solvent decomposition mechanism under a positively biased tip, further investigation is needed although the mechanism proposed by Vasko et al [16], in our case involving electron tunneling from the substrate to the tip and formation of reaction intermediates, could provide a valid explanation.…”