Understanding the coexistence of two bipolar resistive switching modes with opposite polarity in CuxO (1 ≤ x ≤ 2)-based two-terminal devices

Sterin, N S; Nivedya, T.; Mal, Sib Sankar; Das, Partha Pratim

doi:10.1007/s10854-021-07415-y

Cited by 4 publications

(5 citation statements)

References 68 publications

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“…Based on the depth of the trap centers, slight variations in the slope may also be observed . In the present case, slope >2 indicates higher depth of the trap centers , . Trap-controlled SCLC involves the charge trapping-detrapping, which is consistent with Schottky emission .…”

Section: Resultssupporting

confidence: 67%

“…This indicates the formation of conducting filament due to the injected electrons after the threshold voltage (V Th ). 58 In order to confirm the role of chemical composition of Lyso in the formation of traps, Au/Lyso/ITO devices have been exposed to 250 °C followed by I−V measurement. Interestingly WORM behavior of the device has been lost completely.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…On the other hand, at the LRS, the I–V curve follows Ohm’s law (scale ∼1, I ∝ V ). This indicates the formation of conducting filament due to the injected electrons after the threshold voltage ( V Th ) . In order to confirm the role of chemical composition of Lyso in the formation of traps, Au/Lyso/ITO devices have been exposed to 250 °C followed by I–V measurement.…”

Section: Resultsmentioning

confidence: 99%

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Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Banik,

Sarkar,

Bhattacharjee

et al. 2023

ACS Omega

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Biocompatibility and transient nature of electronic devices have been the matter of attention in recent times due to their immense potential for sustainable solutions toward hazardous e-wastes. In order to fulfill the requirement of high-density data-storage devices due to explosive growth in digital data, a resistive switching (RS)-based memory device could be the promising alternative to the present Si-based electronics. In this research work, we employed a biocompatible enzymatic protein lysozyme (Lyso) as the active layer to design a RS memory device having a device structure Au/Lyso/ITO. Interestingly the device showed transient, WORM memory behavior. It has been observed that the WORM memory performance of the device was very good with high memory window (2.78 × 10 2 ), data retention (up to 300 min), device yield (∼73.8%), read cyclability, as well as very high device stability (experimentally >700 days, extrapolated to 3000 days). Bias-induced charge trapping followed by conducting filament formation was the key behind such switching behavior. Transient behavior analysis showed that electronic as well as optical behaviors completely disappeared after 10 s dissolution of the device in luke warm water. Cytotoxicity of the as-prepared device was tested by challenging two environmentally derived bacteria, S. aureus and P. aeruginosa, and was found to have no biocidal effects. Hence, the device would cause no harm to the microbial flora when it is discarded. As a whole, this work suggests that Lyso-based WORM memory device could play a key role for the design of transient WORM memory device for sustainable electronic applications.

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Section: Resultssupporting

confidence: 67%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Banik,

Sarkar,

Bhattacharjee

et al. 2023

ACS Omega

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“…Among these devices, resistive random access memory (ReRAM) is a promising candidate. ReRAM is composed of an oxide layer that is vertically sandwiched between two metal electrodes and has features such as nonvolatility and high integration. − ReRAM is a promising high-density device that has a variable resistance layer with a thickness of 30–50 nm based on the principle of oxygen vacancies . However, further miniaturization has been facing difficulty by fluctuations in the operating voltage during the resistance change transition process because the filaments in the channel layer are randomly formed during the setting process. , ReRAM has been developed using organic molecules − to achieve low costs and easy manufacturing, although the operation of these devices is unstable in high temperature and humidity environments.…”

Section: Introductionmentioning

confidence: 99%

Resistance Switch in a Minimal-Fullerene Chain in Vertically Stacked Electrodes

Hirama,

Takei,

Motoyama

et al. 2024

ACS Appl. Electron. Mater.

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A switch element with a minimal-fullerene chain was prepared by spin coating a C 60 pyrrolidine tris-acid (CPTA) film between two vertically stacked metallic electrodes. In this structure, the nanoscale length of the fullerene chain can be adjusted by changing the thickness of the CPTA film by changing spin-coating condition. The CPTA film had a rough surface that led to cause distance fluctuations between the two electrodes. At the thinnest point, a nanoscale chain could be selectively formed as a conductive channel that potentially exhibited binary resistance switching between high-and low-resistance states. This resistance change was primarily caused by the polymerization and depolymerization of the nanoscale C 60 chain in response to external voltage inputs. When the film thickness was reduced to approximately 3.7 nm, corresponding to 3−4 fullerene chains bridging the two electrodes, a stable switching sequence was reproducibly achieved.

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“…Bipolar switching devices offer more stable operation and better uniformity . Interestingly, some bipolar memory devices could exhibit dual resistive switching properties, including counterclockwise (CCW) and clockwise (CW) switching behaviors, which depend on the electroforming process. − To investigate the dual resistive switching behaviors in memory devices with different thin films could be helpful to get insight into the resistive switching mechanism.…”

mentioning

confidence: 99%

Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory

Kang

Niu

Zhang

et al. 2023

J. Phys. Chem. Lett.

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Herein, we report an environmentally stable and friendly halide perovskite based resistive random access memory device with an Ag/PMMA/ (PMA) 2 CuBr 4 /FTO (PMMA = poly(methyl methacrylate); PMA = C 6 H 5 CH 2 NH 3 ) architecture. The device exhibits the coexistence of two bipolar resistive switching modes, including counterclockwise and clockwise switching characteristics. The devices with both switching modes show stable endurance (>100 cycles) and long retention performance (>10 4 s). By applying a suitable electrical stimulation, the counterclockwise and clockwise switching behaviors are interconvertible. Furthermore, the Au/PMMA/(PMA) 2 CuBr 4 /FTO and Ag/ (PMA) 2 CuBr 4 /FTO devices were fabricated to verify the origin of dual resistive switching behaviors. The similar dual resistive switching behaviors after electroforming processes of three types of memory devices suggest that the interconvertible dual resistive switching characteristics could be attributed to the ionic migration in the (PMA) 2 CuBr 4 perovskite layer.

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Understanding the coexistence of two bipolar resistive switching modes with opposite polarity in CuxO (1 ≤ x ≤ 2)-based two-terminal devices

Cited by 4 publications

References 68 publications

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Resistance Switch in a Minimal-Fullerene Chain in Vertically Stacked Electrodes

Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory

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