Understanding the Thermal Time Constants of GaN HEMTs through Model Order Reduction Technique

Jakani, Anass; Sommet, Raphaël; Simbélie, Frédérique; Nallatamby, Jean-Christophe

doi:10.3390/electronics10243138

Cited by 6 publications

(1 citation statement)

References 15 publications

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“…The relevant temperature profiles are demonstrated in Figure 4 b,c for the FC-1 and FC-2 schemes, respectively. Furthermore, a material with high thermal diffusivity, α = κ/(ρ·C p ) [ 27 ], means that the heat can be rapidly transferred from the hot region to the cold region. The estimated thermal diffusivities are also listed in Table 1 .…”

Section: Resultsmentioning

confidence: 99%

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

et al. 2023

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment between the HEMT cells and the thermal conduction bumps. Steady-state thermal simulations were conducted to study the channel temperatures of GaN HEMTs with various Au bump patterns at different levels of current and voltage loadings, and the results were compared with the conventional face-up GaN die bonding on an AlN package substrate. The simulations were started from a single finger isolated HEMT cell and then extended to multiple fingers HEMT cells (total gate width > 40 mm) to investigate the “thermal cross-talk” effect from neighboring devices. Thermal analysis of the GaN HEMT under pulse operation was also performed to better reflect the actual conditions in power conversion or pulsed laser driver applications. Our analysis provides a combinational assessment of power GaN HEMT dies under a working condition (e.g., 1MHz, 25% duty cycle) with different flip chip packaging schemes. The analysis indicated that the channel temperature rise (∆T) of a HEMT cell in operation can be reduced by 44~46% by changing from face-up die bonding to a flip-chip bonding scheme with an optimized bump pattern design.

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Section: Resultsmentioning

confidence: 99%

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

et al. 2023

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Double-sided numerical thermal modeling of fan-out panel-level MOSFET power modules

Li,

Chen,

Jiang

et al. 2023

Case Studies in Thermal Engineering

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GaN HEMTs thermal time constants: Theory and Measurements

Jakani

Sommet

Karrame

et al. 2022

2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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The focus of this paper is to provide a better understanding on the role of the different layers as well as the gate length in determining thermal time constants in GaN High Electron Mobility Transistors (HEMTs). The paper is divided in two parts. In the first one, a theoretical approach is proposed where a comparison between numerical Finite Element Analysis (FEA) coupled to Model Order Reduction technique based on Ritz vector method and analytical approach is performed. It has been shown that real physical thermal time constants obtained from the analytical solution of the heat equation of simple realistic structures which represent GaN HEMTs can be obtained through a coupled approach between a numerical solution and a model order reduction technique. The second part explores a measurement approach to identify the transient time constant behavior of GaN HEMT devices. This measurement technique is based on a transient thermoreflectance imaging.

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Understanding the Thermal Time Constants of GaN HEMTs through Model Order Reduction Technique

Cited by 6 publications

References 15 publications

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

Double-sided numerical thermal modeling of fan-out panel-level MOSFET power modules

GaN HEMTs thermal time constants: Theory and Measurements

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