Unexpected Benefits of Rapid Growth Rate for III−V Nanowires

Joyce, Hannah J.; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati; Kim, Yong; Fickenscher, Melodie A.; Perera, S.; Hoang, Thang B.; Smith, L. M.; Jackson, Howard E.; Yarrison-Rice, J.M.; Zhang, Xin; Zou, Jin

doi:10.1021/nl803182c

Cited by 130 publications

(136 citation statements)

References 71 publications

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“…A detailed description regarding the growth of GaAs NWs has been reported elsewhere. 27,28 The morphology of GaAs NWs was characterized using a ZEISS Auriga scanning electron microscope (SEM). SEM characterization showed that the cross sections of the NWs are of hexagonal geometry.…”

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Strengthening Brittle Semiconductor Nanowires through Stacking Faults: Insights from in Situ Mechanical Testing

et al. 2013

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Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.

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Strengthening Brittle Semiconductor Nanowires through Stacking Faults: Insights from in Situ Mechanical Testing

et al. 2013

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“…In an MOCVD system, the morphological and crystal properties of the III-V nanowire are commonly controlled by tuning the growth temperature, V/III ratio, and precursor flow rate. [17][18][19] Recently, efforts have been devoted to controlling nanowire growths by varying the properties of the catalysts. 20,21 It has been demonstrated by controlling the shape of Au catalysts, the growth kinetics of InAs nanowires can be enhanced.…”

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Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures

Guo

Liao

et al. 2013

Applied Physics Letters

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In this study, Pd was used as catalyst to grow one-dimensional InAs nanostructures on GaAs (111)B substrates in order to explore the growth mechanism and the effect of non-gold catalysts in growing epitaxial III-V nanostructures. With detailed morphological, structural, and chemical characterizations using electron microscopy, coupled with analysis of the Pd-In binary phase diagram, it was found that size of Pd nanoparticles plays a key role in determining the growth mechanism of one-dimensional InAs nanostructures.

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“…34 and 38-40) and donoracceptor pair (DAP) peak at 1.48-1.49 eV. 24,38,40 The DAP peak is commonly associated with carbon, 38,40 which is an inherent impurity in MOVPE. As discussed above, Zn is expected to be incorporated in the NWs.…”

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GaAs nanowires grown on Al-doped ZnO buffer layer

Haggrén¹,

Perros²,

Dhaka³

et al. 2013

Journal of Applied Physics

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We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430-540 C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand $400 C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buffer layer. V C 2013 AIP Publishing LLC.

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Unexpected Benefits of Rapid Growth Rate for III−V Nanowires

Cited by 130 publications

References 71 publications

Strengthening Brittle Semiconductor Nanowires through Stacking Faults: Insights from in Situ Mechanical Testing

Strengthening Brittle Semiconductor Nanowires through Stacking Faults: Insights from in Situ Mechanical Testing

Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures

GaAs nanowires grown on Al-doped ZnO buffer layer

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