Uniform behavior of insulators irradiated by swift heavy ions

Response of GaN to energetic ion irradiation: conditions for ion track formation

“…Still, in contrast to SHI tracks [71][72][73][74], it seems that the investigated materials do not show the same uniform response with respect to HCI track formation. As can be seen from Fig.7, especially more experimental work on HCI irradiation of TiO2 crystalline materials from ref.…”

Uniform analysis of electronic sputtering in amorphizable and non-amorphizable insulators and semiconductors

“…Most of the irradiations were performed using ions with specific energies E<2 MeV/nucleon. An estimate of the Analytical Thermal Spike Model (ATSM) [8,9] for ΔT(r) is accepted and the expression of Seiberling et al for the Y sputtering yield is applied that was elaborated originally for the thermalized ionexplosion model [10]. Excellent agreement with the experimental data is obtained for all the 10 solids in the whole range of S e .…”

“…A systematic study of the ion-induced tracks has been made in insulators applying the ATSM [8]. It was found that the maximum induced temperature increase ΔT(r)=T(r)-T ir (T ir -irradiation temperature) is identical when 〈s e 〉=S e /N=constant and it does not depend on MPs.…”

“…In [8] it was derived for the radial temperature distribution around the trajectory of projectiles that…”

“…Earlier, these were not realized when track formations taking place in different insulators were considered as independent processes. The consequences of this basic observation have been applied in the analysis of the track formation and unexpected uniformity of the induced temperature was found when different solids were compared [8]. This is the first attempt to use these results for systematic experiments on electronic sputtering.…”