Uniformity Improvement of SiN<i>
                     <sub>x</sub>
                  </i>-Based Resistive Switching Memory by Suppressed Internal Overshoot Current

Kim, Min-Hwi; Kim, Sungjun; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Jaewoong; Cho, Seongjae

doi:10.1109/tnano.2018.2842071

Cited by 22 publications

(11 citation statements)

References 24 publications

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“…2a. This is typical asymmetric conducting filament evolution behavior with the applied bias voltage and polarity from the HfO2 layer [37]. The Pt/Al2O3/TiN device shows BRS with a relatively linear on-state in Figure 2b.…”

Section: Resultsmentioning

confidence: 85%

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Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Choi

Kim

2020

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In this work, we present the nonlinear current–voltage (I–V) characteristics of a complementary resistive switching (CRS)-like curve from a HfAlOx-based memristor, used to implement a high-density cross-point array. A Pt/HfAlOx/TiN device has lower on-current and larger selectivity compared to Pt/HfO2/TiN or Pt/Al2O3/TiN devices. It has been shown that the on-current and first reset peak current after the forming process are crucial in obtaining a CRS-like curve. We demonstrate transient CRS-like characteristics with high nonlinearity under pulse response for practical applications. Finally, after finding the optimal conditions for high selectivity, the calculated read margin proves that a Pt/HfAlOx/TiN device with a CRS-like curve is most suitable for use in a high-density cross-point array. Our results suggest that the built-in selector properties in a Pt/HfAlOx/TiN single layer device offer considerable potential in terms of the simplicity of the processes involved in the cross-point structure.

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Section: Resultsmentioning

confidence: 85%

“…The Pt/HfO2/TiN device shows quite a nonlinear curve in the positive region during its on-state in the inset of Figure2a. This is typical asymmetric conducting filament evolution behavior with the applied bias voltage and polarity from the HfO2 layer[37]. The Pt/Al2O3/TiN device shows BRS with a relatively linear on-state in Figure2b.…”

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confidence: 85%

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Choi

Kim

2020

Coatings

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“…NN and NO bonds are observed for Si 3 N 4 and SiO x at 6 s and the NO bond is dominant at 12 s. The SiO 2 layer acts as a tunnel barrier to enhance low‐power and uniform resistive switching and minimize current overshoot. [ 27–29 ]…”

Section: Figurementioning

confidence: 99%

Coexistence of Long‐Term Memory and Short‐Term Memory in an SiN_x‐Based Memristor

Choi

Kim

2020

Physica Rapid Research Ltrs

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Neuromorphic computing has the capacity to emulate the neural structure and the operation of the human brain with energyefficient and flexible processing. [1] When implementing a neuromorphic system on the hardware level, an array of memristors can be used as adaptive synapses. [2,3] In particular, vector matrix multiplication in a memristor has the advantage of greatly reducing the computational burden of the graphics processing unit. Basically, long-term retention is preferred for hardware-based neuromorphic systems in terms of energy efficiency. On the other hand, short-term memory (STM) is suitable for temporal/sequential data processing, which can be emulated by the loss of retention in a memristor. [4,5] Until now, the artificial synaptic devices of memristor type have been reported from a lot of materials to implement the bio-inspired computing. [6-13] SiN x is one of the core materials in the complementary metal oxide semiconductor (CMOS) process, where it is used as a passivating, buffer, masking, and chemical mechanical polishing stopper layer. It has also been used in nonvolatile memory applications, such as in NAND flash [14] and memristor devices. [15-24] The SiN x layer has a different form in flash memory as in charge trapping. The SiN x layer in a memristor acts as a resistive switching layer by controlling conductance with the applied electric

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“…Recently, nitride-based RRAM devices such as AlN, NiN, BN, and SiN also presented exceptional characteristics considering endurance, retention, reliability, and multilevel cell (MLC). Amorphous thin films with abundant traps are considered as a viable option for artificial synaptic material because the conductance can be easily adjusted according to the voltage applied externally [11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate

et al. 2020

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Brain-inspired artificial synaptic devices and neurons have the potential for application in future neuromorphic computing as they consume low energy. In this study, the memristive switching characteristics of a nitride-based device with two amorphous layers (SiN/BN) is investigated. We demonstrate the coexistence of filamentary (abrupt) and interface (homogeneous) switching of Ni/SiN/BN/n++-Si devices. A better gradual conductance modulation is achieved for interface-type switching as compared with filamentary switching for an artificial synaptic device using appropriate voltage pulse stimulations. The improved classification accuracy for the interface switching (85.6%) is confirmed and compared to the accuracy of the filamentary switching mode (75.1%) by a three-layer neural network (784 × 128 × 10). Furthermore, the spike-timing-dependent plasticity characteristics of the synaptic device are also demonstrated. The results indicate the possibility of achieving an artificial synapse with a bilayer SiN/BN structure.

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Uniformity Improvement of SiN _x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current

Cited by 22 publications

References 24 publications

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Coexistence of Long‐Term Memory and Short‐Term Memory in an SiN_x‐Based Memristor

Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate

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Uniformity Improvement of SiN x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current

Cited by 22 publications

References 24 publications

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Coexistence of Long‐Term Memory and Short‐Term Memory in an SiNx‐Based Memristor

Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate

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Product

Resources

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Uniformity Improvement of SiN _x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current

Coexistence of Long‐Term Memory and Short‐Term Memory in an SiN_x‐Based Memristor