Unique features of the generation–recombination noise in quasi-one-dimensional van der Waals nanoribbons

Abstract

We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity. Whereas the low-frequency noise spectral density, SI/I 2 , reveals 1/f behavior near room temperature, it is dominated by the Lorentzian bulges of the generation-recombination noise at low temperatures (I is the current and f is the frequency).Unexpectedly, the corner frequency of the observed Lorentzian peaks shows strong sensitivity to the applied source-drain bias. This dependence on electric field can be explained by the Frenkel-Poole effect in the scenario where the voltage drop happens predominantly on the defects, which block the quasi-1D conduction channels. We also have found that the activation energy of the characteristic frequencies of the G-R noise in quasi-1D ZrTe3 is defined primarily by the temperature dependence of the capture cross-section of the defects rather than by their energy position. These results are important for the application of quasi-1D van der Waals materials in ultimately downscaled electronics.

Low Resistivity and High Breakdown Current Density of 10 nm Diameter van der Waals TaSe3 Nanowires by Chemical Vapor Deposition

“…TaSe3 has been known for a long time and bulk samples have been prepared using chemical vapor transport (CVT), a process that requires long process times and is not amenable to current semiconductor processing paradigms; exfoliation of such samples yielded the results reported by some of us earlier. [15][16][17] Interconnect performance is crucial for low-power high-clock-frequency computing: the transition from aluminum to copper interconnects starting some 20 years ago was driven by both the better conductivity of copper and the better manageability of electromigration in copper, the key failure mechanism for interconnects. 29,30 However, as the cross section of an interconnect becomes shorter than the electron mean free path (~40 nm in copper), [19][20][21] its resistivity increases dramatically due to scattering at the material surface and at internal grain boundaries.…”

“…The inset plots SEM width vs. the AFM height of the wires indicated by black markers in the main panel.For measurement of the electrical transport properties of the TaSe3 nanowires we employed electron beam lithography (EBL) to fabricate contacts consisting of 5 nm of yttrium for adhesion and 50nm of gold for conduction and stability. Previous studies of TaSe3 nanowires[15][16][17] used encapsulation in h-BN to avoid surface decomposition by oxygen and moisture from the air.…”

Low-frequency electronic noise in superlattice and random-packed thin films of colloidal quantum dots

“…For this reason, we used an alternative approach for finding the characteristic time, τ, by plotting the noise spectral density as a function of temperature at different frequencies. 53,54 If these dependences have maxima, it is assumed that τ = 1/2πfc at the temperature of the maximum, Tm. The Arrhenius plot of ln (fc) versus 1/Tm allows one to find the activation energy for the noise process.…”

Raman scattering of true 1D van der Waals Nb2Se9 nanowires

“…To date, many compositions of quasi‐1D vdW materials, such as MX 3 (M: transition metal atoms from either group IVB [Ti, Zr, Hf] or group VB [Nb, Ta]; X: chalcogen atoms from group VIA [S, Se, Te]), Bi 4 I 4 , 5 Nb 2 PdS 5 , 7 Ta 2 Pd 3 Se 8 , 8 Sb 2 Se 3 , 12,13 CsBi 4 Te 6 , 15 TaSe 3 , 22,23 and ZrTe 3 , 24,25 have been investigated, whereas only few true 1D vdW materials, including Te, 14 VS 4 , 16 and MoSI, 18 have been reported. We recently demonstrated the successful synthesis of a new 1D vdW material with the chemical formula Nb 2 Se 9 , 26 and its trend of bandgap with bundling effect, to estimate its potential in optical device application 27 .…”