Unique MOSFET/IGBT drivers and their applications in future power electronic systems

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

“…The turn-ON of a MOSFET is described in [26][27][28]. The idealized plots of the gate current (IG), the drain-source current (IDS) and the gatesource voltage (VGS) transients for a SiC MOSFET during turn-ON at a low (25°C) and high (150°C) junction temperatures are shown in Fig.…”

The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS

“…The most important point in the design of IGBT driver is rising time and falling time [1]. This problem makes the size of an output buffer very big.…”

“…Generally IGBT driver is used to flash the photoflash. The present research points of IGBT driver are driving current, rising and falling time, area and power [1,2,3]. The photographer can get the picture of the various colors to want through controlling brightness of a photoflash.…”

“…The pulse width duration of V OUT is proportional to CAP and V MS with the thing to calculate equation(1).…”

New broadband driver for switchmode RF power wideband amplifiers

“…Moreover, in order to be usable for communication applications switch-mode RF power amplifiers must operate over a much wider bandwidth than the power converters they are derived from. "Totem-Poles" or voltage switching Class-D drivers circuits exists in the literature that provide trapezoidal voltage waveforms over wide bandwidths, some are capable of sourcing and sinking high current peaks at megahertz or submegahertz frequency ranges [2], others can drive small area transistors at the UHF region in narrowband conditions [3] but there are no examples (to the knowledge of this author) of efficient circuits for driving large area transistors operating into switch-mode amplifiers at high frequencies and wideband conditions. Because the reasons given above, at the present "gate-swamping" driving techniques based on sinusoidal voltage waveforms is the most used driving method for wideband switch-mode RF amplifiers [4].…”