Nanopatterning is a fundamental technology for the fabrication and integration of nanoscale devices. Unfortunately, conventional photolithography, widely used in the semiconductor industry, is facing the inherent resolution limit for sub-14 nm scale feature patterning in terms of exposure wavelength, photoresist performance, and process equipment development. Directed selfassembly (DSA) of block copolymers (BCPs) is an emerging complementary technology that may overcome such fundamental resolution limitations. BCPs are typical self-assembling polymeric materials consisting of covalently linked macromolecular blocks. Self-assembled thin films of BCPs provide periodic arrays of nanoscale spheres, cylinders, lamellae with ultrafine tunability of feature size (3-50 nm) and arbitrary large area scalability. After pattern transfer, organic BCP film can be easily disposed by a mild etching process, which is highly compatible with traditional photoresist based semiconductor processing [1][2][3][4].To date, various DSA technologies have been exploited for the well-ordered device-oriented nanopatterns. In general, DSA approaches synergistically integrate the bottom-up process of BCP self-assembly with a top-down process of conventional photolithography, such as ArF lithography, I-line lithography or Ebeam lithography. A chemical or topographical surface pattern generated by the conventional photolithography directs the orientation and positional ordering of the BCP self-assembled nanodomains for laterally ordered periodic nanopatterns. DSA principles are commonly classified into 'epitaxial self-assembly' and 'graphoepitaxy' according to the nature of the structuredirecting surface pattern. 'Epitaxial self-assembly' employs chemical patterns to direct BCP self-assembly. A highly ordered nanopattern is anticipated when the chemical pattern commensurates with the equilibrium periodicity of BCP self-assembled nanodomains [5,6]. By contrast, 'graphoepitaxy' utilizes lithographically patterned topographical features. The selective wetting of a particular BCP component at the topographic trench side walls enforces the lateral ordering of the self-assembled BCP nanodomains along the trench wall [7]. Those two principal DSA principles have been successfully progressed for practical semiconductor processing, while diverse advantages are anticipated, including pattern density multiplication, feature size uniformity improvement, line edge roughness reduction, and enormous cost reduction.In order to systematically investigate the fundamental requirements for the effective integration of DSA into practical semiconductor process, several DSA consortiums were recently organized worldwide, including both industry and academia [8-10]. Considerable research effort has been devoted to the development and optimization of DSA process, relevant materials, defect analysis/ reduction, etch stack integration and so on. Such collaborative efforts came to bear the successful implementation of a 412 1369-7021/ß