The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection. In this field, the two-dimensional (2D) tungsten disulfide (WS 2 ) exhibits intriguing optical and electronic properties, making it an attractive photosensitive material for optoelectronic applications. However, the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS 2 impedes its application in high-performance photodetectors. Herein, we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS 2 . In this device, 1D Te induces in-plane strain in 2D WS 2 , which regulates the electronic structures of local WS 2 and gives rise to type-II band alignment in the horizontal direction. Moreover, the vertical heterojunction built of 2D WS 2 and 1D Te introduces a high photoconductive gain. Benefiting from these two effects, the transfer of photogenerated carriers is optimized, and the proposed photodetector exhibits high sensitivity (photoresponsivity of ~27.7 A W −1 , detectivity of 9.5 × 10 12 Jones, and short rise/ decay time of 19.3/17.6 ms). In addition, anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved. This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties, opening up a new avenue towards constructing multifunctional optoelectronic devices.