2021
DOI: 10.1002/adom.202100450
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Universal Strategy Integrating Strain and Interface Engineering to Drive High‐Performance 2D Material Photodetectors

Abstract: 2D indium chalcogenides including α‐In2Se3 and InSe are promising candidates for next‐generation optoelectronic devices. However, the performance of traditional SiO2‐supported devices is limited because of the detrimental effect of the substrate, which greatly restricts charge transportation. Although the induction of an internal (built‐in) electric field can alleviate this situation, the application of conventional stacking technology required in this case inevitably introduces interface defects. Against this… Show more

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Cited by 38 publications
(34 citation statements)
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“…An α-In 2 Se 3 nanoflake was selected as the sensing material due to its direct band gap in the multilayer form . The Raman spectrum of the α-In 2 Se 3 nanoflake shows four peaks at 86, 103, 180, and 193 cm –1 (Figure a), which is consistent with our previous report . The AFM height profile indicates that the thickness of the α-In 2 Se 3 nanoflake was about 62.3 nm (Figure S6).…”
Section: Resultssupporting
confidence: 86%
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“…An α-In 2 Se 3 nanoflake was selected as the sensing material due to its direct band gap in the multilayer form . The Raman spectrum of the α-In 2 Se 3 nanoflake shows four peaks at 86, 103, 180, and 193 cm –1 (Figure a), which is consistent with our previous report . The AFM height profile indicates that the thickness of the α-In 2 Se 3 nanoflake was about 62.3 nm (Figure S6).…”
Section: Resultssupporting
confidence: 86%
“…68 The Raman spectrum of the α-In 2 Se 3 nanoflake shows four peaks at 86, 103, 180, and 193 cm −1 (Figure 8a), which is consistent with our previous report. 35 The AFM height profile indicates that the thickness of the α-In 2 Se 3 nanoflake was about 62.3 nm (Figure S6). To confirm the photosensing properties, the current−voltage (I−V) curves of the α-In 2 Se 3 -based device were recorded in the illumination of laser light and in the dark, respectively.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
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“…Fabrication of the Photodetector: WS 2 nanoflake was exfoliated on a SiO 2 /Si substrate following the similar process in the previous report. [49] Briefly, WS 2 nanoflakes were cleaved from the bulk crystal by the scotch tape and were transferred onto a poly(methyl methacrylate) (PMMA) transfer layer. The PMMA transfer layer with a WS 2 nanoflake was pressed onto the SiO 2 /Si substrate at 60 °C for 5 min.…”
Section: Methodsmentioning
confidence: 99%
“…5e presents a complete photoresponse cycle of the M-WS 2 /Te device. The rise time (τ rise ) and decay time (τ decay ) are defined as the times required for the photocurrent to change from 10% to 90% and from 90% to 10%, respectively [42,43].…”
Section: Science China Materialsmentioning
confidence: 99%