Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors

Abstract

In this chapter, it is first described how the surface science and engineering of the III-V compound semiconductors are relevant to developing the semiconductorbased materials, including bismuth (Bi) containing III-V films, for improved electronics and optoelectronics devices. After that the general properties of the III-V(100) surfaces, which usually undergo strong atomic rearrangements (reconstructions), are reviewed. Before focusing on the unusual Bi-induced III-V(100)(2 × 1) reconstructions and Bi-induced changes in the III-V(100)(2 × 4) surfaces, it is described the experimental and computational research methods used as well as the advantages obtained by combining the experimental and computational results in the analysis. Calculational results reveal an interesting correlation between the geometry and surface band structure of the (2 × 1) reconstruction, and the relative stability of the (2 × 1) reconstruction. Role of Semiconductor Surfaces in Development of Device MaterialsMonocrystalline III-V compound semiconductor (e.g., GaAs, InP, and GaSb) films are the established materials of devices like laser diodes ( Fig. 10.1) and mobilephone transistors, also in future very probably. Furthermore, the integration of III-V's films on silicon (Si) semiconductor substrates, the latter of which form the well-refined basis for most electronics components, has been intensively investigated for developing, for example, the transistors of radio-frequency and

High Hole Mobility in GaAs1-xBix Alloys

“…The growth mode of GaAs 1Àx Bi x is distinguished from that of GaN x As 1Àx by a surfactant-like effect of the Bi atoms; the Bi atoms work as a surfactant to enhance the migration of atoms during GaAs 1Àx Bi x growth as in other III-Vs grown at high temperature. 16,17) The metallic nature of (2 Â 1) Bi-adsorbed GaAs 18) probably enhances the migration of atoms on the surface, 19) as reported in a study of III-V nitrides. 20) While localized states such as Bi clusters 21) are reported for GaAs 1Àx Bi x and N clusters for GaN x As 1Àx , 22) GaAs 1Àx Bi x grown under the surfactant effect has the potential to show nondegraded optical and electrical properties, even for GaAs 1Àx Bi x with a large GaBi molar fraction.…”