High Hole Mobility in GaAs<sub>1-x</sub>Bi<sub>x</sub> Alloys

Kado, Kosuke; Fuyuki, Takuma; Yamada, Kazuya; Oe, Kunishige; Yoshimoto, Masahiro

doi:10.1143/jjap.51.040204

Cited by 22 publications

(10 citation statements)

References 27 publications

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“…Electronic transport properties (effective mass, electron mobility, scattering time of electrons) have to be determined before the fabrication of GaAsBi-based electronic and optoelectronic devices. There are few studies on electrical transport studies on bulk/epilayer GaAsBi structures [23][24][25][26][27][28][29][30][31] but, to the best of our knowledge, no report on electron transport properties of n-type GaAsBi-based QW structures.…”

Section: Introductionmentioning

confidence: 99%

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Donmez¹,

Aydın²,

Ardalı³

et al. 2020

Semicond. Sci. Technol.

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We investigate electronic transport properties of as-grown and annealed n-type modulationdoped Al 0.15 Ga 0.85 As/GaAs 1−x Bi x (x=0 and 0.04) quantum well (QW) structures using magnetotransport measurements in the temperature range 4.2 K and 60 K and at magnetic fields up to 18 T. Thermal annealing process was applied at two different temperatures, 700 °C and 350 °C during 60 s and 180 s, respectively. We find that electron effective mass and 2D electron density in as-grown Bi-containing sample are slightly lower than that in Bi-free one. Furthermore, quantum electron mobility and quantum scattering time are observed to be decreased in Bi-containing samples. The annealing process at 700 °C causes a slight increase in electron effective mass and 2D electron density. A negligible decrease in electron effective mass and an increase in 2D electron density are determined following annealing at 350 °C. The observed change in electron effective mass following thermal annealing process is attributed to changing 2D electron density in the samples. No improvement on quantum electron mobility and quantum scattering time are observed following thermal annealing at both process temperatures. We determine that one electron subband (e1) for as-grown and annealed (at 700 °C for 60 s) Bicontaining QWs and two electron subbands (e1 and e2) for the annealed (at 350 °C for 180 s) GaAsBi QW sample and the Bi-free QW sample contribute to electronic transport. Our results reveal that there is no significant direct effect of Bi on effective electron mass, but an indirect effect, in which Bi can provoke changes in 2D electron density and hence causes not to observe actual band-edge electron mass but a deviation from its band-edge value. Therefore, it can be concluded that dispersion curve of conduction band does not change as an effect of Bi incorporation in GaAs.

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Section: Introductionmentioning

confidence: 99%

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Donmez¹,

Aydın²,

Ardalı³

et al. 2020

Semicond. Sci. Technol.

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“…Similar hole concentrations were obtained using Hall effect measurements for p-layers grown under similar conditions. 14) The C-f measurements and TAS probe the deep levels in the depletion layer (Fig. 1) under dc bias conditions.…”

Section: Resultsmentioning

confidence: 98%

“…12,13) However, we achieved high hole mobility in GaAs 1Àx Bi x compared to that in GaAs by adjusting the growth mode. 14) We recently demonstrated the first successful lasing operation of GaAs 1Àx Bi x using optical excitation and the low temperature sensitivity of the lasing wavelength. 15) The abovementioned results are probably owing to the surfactant-like effect of the bismuth atoms during growth.…”

Section: Introductionmentioning

confidence: 99%

Interface States in p-Type GaAs/GaAs_1-xBi_xHeterostructure

Fuyuki

Kashiyama

et al. 2012

Jpn. J. Appl. Phys.

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The characteristics of interface states in a GaAs/GaAs1-x Bi x heterointerface have been evaluated by capacitance–frequency measurements, thermal admittance spectroscopy, and isothermal capacitance transient spectroscopy. The interface states density D it is evaluated to be approximately 9 ×1011 cm-2 eV-1 for the first time. The large density is probably caused by the fact that the surface of GaAs and GaAs1-x Bi x are shown to be nonmetallic and metallic, respectively. The interface states density is reduced by half by insertion of a Bi graded layer into the GaAs/p-GaAs1-x Bi x heterointerface, which is on the same order as other III–V heterointerfaces such as GaAs/GaAs0.97N0.03 and In0.5Ga0.5P/Al0.25Ga0.75As.

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“…There are relatively few reports available on GaAsBi concerning the electrical parameters used in the calculations in this paper. With Bi mainly affecting the valence band, the hole mobility has been shown to reduce much more strongly than the electron mobility with increasing Bi incorporation [34]. In solar cell devices the majority of carriers will be generated in a p-type base layer with electrons as the minority carriers.…”

Section: Current Status and Challenges Of Gaas 1−x Bi Xmentioning

confidence: 99%

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

Thomas

Mellor

Hylton

et al. 2015

Semicond. Sci. Technol.

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Abstract. Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps (typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be improved by introducing a 1 eV absorber into the stack, either replacing Ge in a triplejunction configuration or on top of Ge in a quad-junction configuration. GaAs 0.94 Bi 0.06 yields a direct-gap at 1 eV with only 0.7% strain on GaAs and the feasibility of the material has been demonstrated from GaAsBi photodetector devices. The relatively high absorption coefficient of GaAsBi suggests sufficient current can be generated to match the sub-cell photocurrent from the other sub-cells of a standard multi-junction solar cell. However, minority carrier transport and background doping levels place constraints on both p/n and p-i-n diode configurations. In the possible case of short minority carrier diffusion lengths we recommend the use of a p-i-n diode, and predict the material parameters that are necessary to achieve high efficiencies in a GaInP/GaAs/GaAsBi/Ge quad-junction cell.

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High Hole Mobility in GaAs_1-xBi_x Alloys

Cited by 22 publications

References 27 publications

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Interface States in p-Type GaAs/GaAs_1-xBi_xHeterostructure

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

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High Hole Mobility in GaAs1-xBix Alloys

Cited by 22 publications

References 27 publications

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Interface States in p-Type GaAs/GaAs1-xBixHeterostructure

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

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High Hole Mobility in GaAs_1-xBi_x Alloys

Interface States in p-Type GaAs/GaAs_1-xBi_xHeterostructure