Deep-level transient spectroscopy measurements reveal deep-hole traps with activation energies of 0.43 and 0.23 eV in p-type GaAs1-x Bi x samples with x = 1.2 and 3.4%, respectively, grown at 370 °C by molecular beam epitaxy. In spite of low-temperature growth, the deep-level trap concentration is suppressed on the order of 1015 cm-3, suggesting that Bi atoms contribute to the enhancement of migration to prevent the formation of point defects. The possible origin of the hole traps is discussed in connection with arsenic antisite, AsGa, and bismuth antisite, BiGa.

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ZnS1-xTex:N/n-ZnS diodes have been fabricated in an attempt to convert ZnS into p-type by Te incorporation and the resulting upward shift of the valence band maximum. The diodes exhibit clear rectification in the current–voltage characteristic and a peak of the electron-beam-induced current at the ZnS1-xTex:N/n-ZnS interface. Furthermore, a ZnS0.85Te0.15:N/n-ZnS diode exhibits blue-green electroluminescence due to self-activated emission in n-ZnS at 290 K under a forward current. These results suggest p-type conduction in ZnS1-xTex:N, and thus the LED operation of a ZnS-based pn-junction.

p‐type doping of ZnS1–xTex alloy with N acceptors has been studied with an idea that an upward shift of the valence band maximum due to Te incorporation could improve p‐type doping efficiency. The resistivity was found to be less than 100 Ωcm for the layers with 0.2 < x < 0.3, which are suggested to be p‐type from the currentvoltage (I – V) characteristic and the electron‐beam induced current. For further characterization, ZnSTe:N/n‐ZnS diode structures have been fabricated. It was found that the diode exhibits clear rectification in I – V characteristic, and blue‐green electroluminescence probably due to hole injection from the ZnSTe:N layer into the n‐ZnS layer. These results indicate p‐type conduction in ZnSTe:N, and thus the light‐emitting diode operation in the ZnS‐based pn‐junctions. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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