Lasing oscillation at wavelengths up to 1045 nm at room temperature has been realized from GaAs1−xBix Fabry–Perot laser diodes (FP-LDs) by electrical injection, and the temperature characteristics of GaAs1−xBix FP-LDs are revealed for the first time. The characteristic temperature T0 of the GaAs0.97Bi0.03 FP-LD in the temperature range between 15 and 40 °C (T0 = 125 K) is similar to that reported for typical 0.98 µm InGaAs/GaAs LDs. The temperature coefficient of the lasing wavelength in GaAs0.97Bi0.03 FP-LDs is reduced to 0.17 nm/K, which is only 45% of that of GaAs FP-LDs.

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Deep-level transient spectroscopy measurements reveal deep-hole traps with activation energies of 0.43 and 0.23 eV in p-type GaAs1-x Bi x samples with x = 1.2 and 3.4%, respectively, grown at 370 °C by molecular beam epitaxy. In spite of low-temperature growth, the deep-level trap concentration is suppressed on the order of 1015 cm-3, suggesting that Bi atoms contribute to the enhancement of migration to prevent the formation of point defects. The possible origin of the hole traps is discussed in connection with arsenic antisite, AsGa, and bismuth antisite, BiGa.

A hole mobility of ∼200 cm2 V-1 s-1 was demonstrated for GaAs1-x Bi x (x ≤4%). This value is comparable to that of GaAs with the same hole concentration. The hole mobility of GaAs1-x Bi x (x ≈5%) degrades, but is still larger than the reported values for GaAs1-x Bi x . Despite concerns regarding the degradation of hole mobility in GaAs1-x Bi x due to scattering at Bi-related localized states near the valence band, p-type GaAs1-x Bi x was able to be obtained without degradation of hole mobility. This is probably owing to the surfactant effect of the bismuth atoms during growth.

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