Deep-Hole Traps in p-Type GaAs1-xBixGrown by Molecular Beam Epitaxy

Fuyuki, Takuma; Kashiyama, Shota; Tominaga, Yoriko; Oe, Kunishige; Yoshimoto, Masahiro

doi:10.7567/jjap.50.080203

Cited by 5 publications

(5 citation statements)

References 17 publications

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“…Growing GaAs at a significantly low growth temperature (400 °C compared to the optimum temperature of 580 °C) is expected to increase the density of defects such as As antisites and Ga vacancies . At this low growth temperature, supplying a Bi flux during growth enhances surface migration of the constituent atoms and results in a lower density of As and/or Ga related defects . According to a recent deep level transient spectroscopy (DLTS) study reported by Fuyuki et al, a GaAs 0.988 Bi 0.012 sample was found to have ∼10 times lower hole trap concentration compared to GaAs when both samples were grown at 370 °C .…”

Section: Resultsmentioning

confidence: 99%

“…where E v (GaAs) is the energy of the valence band maxima (VBM) of GaAs, E Bi is the energy of the Bi level, x is the Bi concentration, and C Bi is the coupling between the Bi level and the GaAs VBM. The incorporation of Bi also may affect the conduction band minima and this can be estimated using the virtual crystal approximation (VCA) (25) which is given by…”

Section: Band Gap Of Gaasbimentioning

confidence: 99%

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Localization effects and band gap of GaAsBi alloys

Mohmad

Bastiman

Hunter

et al. 2014

Phys. Status Solidi B

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The structural and optical properties of GaAs1−xBix alloys for x up to 0.108 have been investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room temperature (RT), the PL intensity of the GaAs0.97Bi0.03 sample was found to be ∼300 times higher than a GaAs control sample grown at the same temperature (400 °C). PL measurements carried out at 10 K show that when excitation power, Pex was increased from 0.11 to 1140 W cm−2, the PL peak energy blue‐shifts by 80 meV while the full‐width‐at‐half‐maximum reduces from 115 to 63 meV. However, the PL peak emission energy becomes independent of the excitation power at RT. The results indicate the presence of localized energy states in the GaAs0.97Bi0.03 sample, which trap carriers at low temperatures and that the majority of the carriers become delocalized at RT. Furthermore, the temperature dependent PL also shows an S‐shape behavior, which is a signature of localization effects. A theoretical model, which was derived by solving a rate equation was employed. The model successfully reproduces the observed S‐shape behavior and the theory fits well with the experimental data. The RT band gap of GaAs1−xBix for x up to 0.108 has been plotted and compared with the literature.

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Section: Resultsmentioning

confidence: 99%

Section: Band Gap Of Gaasbimentioning

confidence: 99%

Localization effects and band gap of GaAsBi alloys

Mohmad

Bastiman

Hunter

et al. 2014

Phys. Status Solidi B

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“…17 Incorporating Bi during low temperature growth enhances surface migration, thus reducing the density of Ga and/or As-related defects. 18 Based on deep level transient spectroscopy (DLTS) study reported recently, the trap concentrations in GaAs 0.988 Bi 0.012 is $10 times lower than GaAs, when both are grown at 370 C. 18 However, Bi incorporation also introduces Bi-related defects such as Bi-antisite, Bi Ga . 19 For x > 0.025, the Bi-related defects started to become significant, thus degrade the optical quality of GaAs 1Àx Bi x .…”

Section: T) ¼ E G (T) -E Pl (T)mentioning

confidence: 99%

The effect of Bi composition to the optical quality of GaAs1−xBix

Mohmad

Bastiman

Hunter

et al. 2011

Applied Physics Letters

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GaAs1−xBix alloys grown by molecular beam epitaxy for x up to 0.06 were studied by photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x < 0.025 improve the material quality of this low temperature growth alloys by reducing the density of gallium (Ga) and/or arsenic related defects. The crystal quality starts to degrade at higher Bi concentration probably due to significant amount of Bi-related defects, BiGa. However, the room temperature PL intensity continues to increase with Bi content for the range studied due to greater band-gap offset between GaAs and GaAs1−xBix. Analysis carried out shows no correlation between localization effects and the room temperature PL enhancement.

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“…By analogy to other highly mismatched semiconductors (as well as LT-MBE GaAs), it is expected that effects of defects on optical and electrical properties should be very strongly manifested. Indeed, recent DLTS measurements [23][24][25] have revealed the presence of a number of carrier traps in GaAsBi alloys. Bi Ga antisite defects were also reported 26 in GaAs lightly doped with Bi.…”

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confidence: 99%

Identification of an isolated arsenic antisite defect in GaAsBi

Dagnelund

Puustinen

Guina

et al. 2014

Applied Physics Letters

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Optically detected magnetic resonance and photoluminescence spectroscopy are employed to study grown-in defects in GaAs0.985Bi0.015 epilayers grown by molecular beam epitaxy. The dominant paramagnetic defect is identified as an isolated arsenic antisite, As-Ga, with an electron g-factor of 2.03 +/- 0.01 and an isotropic hyperfine interaction constant A (900 +/- 620) x 10(-4) cm(-1). The defect is found to be preferably incorporated during the growth at the lowest growth temperature of 270 degrees C, but its formation can be suppressed upon increasing growth temperature to 315 degrees C. The As-Ga concentration is also reduced after post-growth rapid thermal annealing at 600 degrees C

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Deep-Hole Traps in p-Type GaAs_1-xBi_xGrown by Molecular Beam Epitaxy

Cited by 5 publications

References 17 publications

Localization effects and band gap of GaAsBi alloys

Localization effects and band gap of GaAsBi alloys

The effect of Bi composition to the optical quality of GaAs1−xBix

Identification of an isolated arsenic antisite defect in GaAsBi

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