Upper yield point of large diameter silicon

(Invited) Oxygen Precipitation and Defect Generation in Cz Silicon during Second and Millisecond Annealing

“…In this case, it is quite high because the wafer was obtained from a fast cooled ingot. Wafers from fast cooled ingots contain larger grown-in oxide precipitate nuclei than wafers from slowly cooled ingots which leads to higher BMD densities after thermal processing for the former type because the larger nuclei are more difficult to dissolve during temperature ramp up than the small ones (14). The wafer subjected to RTA at 1250 °C contains the highest BMD density.…”

Slip on the surface of silicon wafers under laser irradiation: Scale effect

“…Silicon crystal has a diamond cubic crystalline structure in ambient conditions and the densest planes are {111} and {110}. However, mechanical experiments, including indentation experiments [13,14] and tensile tests, [15] have shown that slipping in bulk silicon only happens in the {111} planes. Slip planes remain {111} in the study of laser-induced slip damage.…”

Empirical inference of in situ wafer sagging in Si epitaxy using pocket susceptor

“…However, there is limited communication on the real-time measurement of wafer deflection during the growth. The reported results vary depending on the test method and the measurement condition used [2][3][4][5]. A quantitative description of the collective influence of the system design, process condition, and material property on wafer deformation is difficult [6][7][8].…”