2009 IEEE International Interconnect Technology Conference 2009
DOI: 10.1109/iitc.2009.5090347
|View full text |Cite
|
Sign up to set email alerts
|

Upstream electromigration study on multiple via structures in copper interconnect

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2011
2011
2012
2012

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 2 publications
0
1
0
Order By: Relevance
“…3D simulations on the void nucleation time using line-via structure have also been reported by many [7][8][9][10]. However, as the current density is no longer the sole driving force for EM, and the surrounding materials and their materials properties of an integrated circuit are the key factors in determining the heat dissipation and the degradation rate in the circuit [11], 2D or simple line-via structure modeling is no longer adequate.…”
Section: Introductionmentioning
confidence: 95%
“…3D simulations on the void nucleation time using line-via structure have also been reported by many [7][8][9][10]. However, as the current density is no longer the sole driving force for EM, and the surrounding materials and their materials properties of an integrated circuit are the key factors in determining the heat dissipation and the degradation rate in the circuit [11], 2D or simple line-via structure modeling is no longer adequate.…”
Section: Introductionmentioning
confidence: 95%