UV-laser-based process for quantum well intermixing of III-V heterostructures

Genest, Jonathan; Dubowski, Jan J.; Aimez, Vincent

doi:10.1117/12.547948

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“…Figure 1 shows the room temperature PL map of sample Q1 after KrF laser irradiation and annealing. We have previously demonstrated that the similar treatment of this material could reduce the blue shift of its bandgap by 22 nm in comparison to the non-treated material [11]. Here, the PL mapping shows a similar shift contrast of 20 nm between the masked and unmasked area.…”

Section: Characterizationsupporting

confidence: 66%

UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures

Genest

Dubowski

Aimez

et al. 2007

J. Phys.: Conf. Ser.

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The influence of surface irradiation of GaAs with a KrF excimer laser on the magnitude of the quantum well intermixing (QWI) effect has been investigated on GaAs/AlGaAs and GaAs/AlGaAs/InAlGaAs QWs heterostructures. The selective area irradiation through a SiO x mask was carried out in an atmospheric environment. Following the 1000 pulses irradiation at 100 mJ/cm 2 , the samples were annealed in a rapid thermal annealing furnace at 900 ºC. Photoluminescence mapping and cathodoluminescence measurements show that significant laser-induced suppression of the QWI process can be achieved with lateral resolution of the order of 1 m.

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Section: Characterizationsupporting

confidence: 66%