UV/ozone-activated growth of oxide layers on InAs(001) surfaces and oxide desorption under arsenic pressure

Schäfer, M.; Naumann, W.; Finnberg, T; Hannss, Matthias; Dutschke, Anke; Antón, R.

doi:10.1016/s0169-4332(99)00599-1

Cited by 11 publications

(2 citation statements)

References 17 publications

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“…This value of 0.2 nm was reported previously on a freshly HCl etched InAs surface and was ascribed to oxide while a 2 nm thickness was ascribed to a carbon contaning contamination layer. 22 These observations are in good agreement with ours. The determination of the precise nature of the oxide/ contamination layer would however be required to fully understand the oxide/contamination effect on the observed PL spectrum.…”

Section: Figure 3 Presents Calculated and Experimental Emission Wavelsupporting

confidence: 92%

Optical properties and morphology of InAs∕InP (113)B surface quantum dots

Nakkar

Folliot

Corre

et al. 2008

Applied Physics Letters

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We report on long-wavelength photoluminescence ͑PL͒ emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP / InP ͑113͒B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k • p theory in the envelope function approximation.

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Section: Figure 3 Presents Calculated and Experimental Emission Wavelsupporting

confidence: 92%

Optical properties and morphology of InAs∕InP (113)B surface quantum dots

Nakkar

Folliot

Corre

et al. 2008

Applied Physics Letters

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“…We used this equation to extract the thermal conductivity of NWs of different radii and length by measuring the current and voltage at which the NWs breakdown, and equating T max to 793 K, a temperature known to result in the desorption of the native oxide [22][23]. Assuming that the NW failure is initiated at 793 K [24][25], the thermal conductivity is plotted for NWs as a function of their radius in Fig.…”

Section: Ivl T R (6)mentioning

confidence: 99%

Observation of Space-Charge-Limited Transport in InAs Nanowires

Katzenmeyer

Léonard

Talin

et al. 2011

IEEE Trans. Nanotechnology

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Abstract-Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual nanowires, both of which are found to be diameter-dependent. Intentionally induced failure by Joule heating supports the notion of space-charge limited transport and proposes reduced thermal conductivity due to the nanowires' polymorphism.

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