UV-pretreatment- and near-infrared rapid thermal annealing-enhanced dehydrogenation for a-Si:H thin films at 400 °C

Ji, Sanghyun; Hwang, Chi‐Sun; Jeong, Pilseong; Lee, Sung Yong; Lee, Kwang Soon

doi:10.1016/j.tsf.2015.12.022

Cited by 3 publications

(3 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The tandem solar cell is more efficient than single junction solar cell owing to absorption of different band of electromagnetic spectrum by different layers of solar cell [6][7][8]. In the present investigation, we have considered randomly textured tandem silicon solar cells in the form of SiO2/ITO/a-Si/c-Si/ZnO/Ag which is shown in Fig.…”

Section: Randomly Textured Tandem Silicon Solar Cells: Theoretical Comentioning

confidence: 99%

Modelling of Random Textured Tandem Silicon Solar Cells Characteristics: Decision Tree Approach

Kamath¹,

Kamat²

2016

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

We report decision tree (DT) modeling of randomly textured tandem silicon solar cells characteristics. The photovoltaic modules of silicon-based solar cells are extremely popular due to their high efficiency and longer lifetime. Decision tree model is one of the most common data mining models can be used for predictive analytics. The reported investigation depicts optimum decision tree architecture achieved by tuning parameters such as Min split, Min bucket, Max depth and Complexity. DT model, thus derived is easy to understand and entails recursive partitioning approach implemented in the "rpart" package. Moreover the performance of the model is evaluated with reference Mean Square Error (MSE) estimate of error rate. The modeling of the random textured silicon solar cells reveals strong correlation of efficiency with "Fill factor" and "thickness of a-Si layer".

show abstract

Section: Randomly Textured Tandem Silicon Solar Cells: Theoretical Comentioning

confidence: 99%

Modelling of Random Textured Tandem Silicon Solar Cells Characteristics: Decision Tree Approach

Kamath¹,

Kamat²

2016

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

show abstract

“…Several methods have been proposed for a dehydrogenation process to improve the issues of the conventional thermal annealing methods [7][8][9][10]. There are some required characteristics and performance for high-efficiency dehydrogenation systems, such as low damage to substrate, fast temperature ramping-up, high throughput, and low cost.…”

Section: Introductionmentioning

confidence: 99%

“…For example, the distorted substrate induced during dehydrogenation process ascribes to the non-uniform spatial distribution of laser energy transfer during ELC, resulting nonuniform crystallization of a-Si film. To meet the requirement of lower damage, ultraviolet (UV) pretreatment is proposed, which is useful to lower the temperature of the following thermal dehydrogenation treatment [8]. Despite this method decreasing annealing temperature, there are still adverse effects at manufacturing throughput problem because the additional UV illumination process prolongs the total dehydrogenation processing time.…”

Section: Introductionmentioning

confidence: 99%

Uniform dehydrogenation of amorphous silicon thin films using a wide thermal annealing system

Jung

Seong

Lee

et al. 2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

To prevent ablation caused by sudden hydrogen eruption during crystallization of hydrogenated amorphous Si (a-Si:H) thin films, a wide dehydrogenation thermal annealing (wDTA) system was developed to reduce hydrogen content in a-Si:H film prior to its crystallization process. The annealed a-Si:H films were fully dehydrogenated and nanocrystallized by the wDTA system. Raman scattering measurement revealed that the dehydrogenation process lowers the hydrogen content through disappearance of the peak intensity at 2000 cm −1 . The a-Si:H film was transformed into nanocrystallized Si with lower residual stress. The major advantage of this wDTA was the large area uniformity of the thermal and the resulting material properties for 8 generation display. The uniform material characteristics of the hydrogen content, thickness, energy bandgap, and transmittance of the annealed Si films in the overall area was confirmed by Raman spectroscopy, spectroscopic ellipsometry, and UV-vis spectrometer measurement.

show abstract

Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors

Wang

et al. 2022

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

UV-pretreatment- and near-infrared rapid thermal annealing-enhanced dehydrogenation for a-Si:H thin films at 400 °C

Cited by 3 publications

References 12 publications

Modelling of Random Textured Tandem Silicon Solar Cells Characteristics: Decision Tree Approach

Modelling of Random Textured Tandem Silicon Solar Cells Characteristics: Decision Tree Approach

Uniform dehydrogenation of amorphous silicon thin films using a wide thermal annealing system

Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors

Contact Info

Product

Resources

About