UV–visible light detection with TiO2 thin film deposited on chemically textured p-Si substrate

Dewasi, Avijit; Mitra, Anirban

doi:10.1007/s10854-018-8949-8

Cited by 10 publications

(4 citation statements)

References 28 publications

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“…where q is the electron charge, η is the ideality factor, T is the absolute temperature, and k B is the Boltzmann constant. The ideality factor η has been calculated from the slope of the linear region under forward bias in the semi-log scale of the I-V characteristics curve from [46][47][48]:…”

Section: Resultsmentioning

confidence: 99%

“…The value of I 0 is obtained by extrapolation of the slope of the straight line of the log(I)-V curve at 0 V and can written as [46]:…”

Section: Resultsmentioning

confidence: 99%

“…Grain boundaries are typically a source of defects in the case of polycrystalline materials [51]. The differential form of Shockley equation has been used to obtain the differential resistance as [46]:…”

mentioning

confidence: 99%

“…Whereas in case of reverse it will be same both for UV and visible-NIR light as they transport in the reverse direction. The responsivity (R) of a photodiode can be defined as the photo-current (I ph ) per unit incident optical power (P inc ) and expressed as [46]:…”

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Laser ablation fabrication of a p-NiO/n-Si heterojunction for broadband and self-powered UV–Visible–NIR photodetection

Chaoudhary

Dewasi

et al. 2022

Nanotechnology

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We report on the optoelectronic characteristics of p-NiO/n-Si heterojunction photodiodes for broadband photodetection, fabricated by depositing a p-type NiO thin film onto a commercial n-type silicon substrate using pulsed laser deposition (PLD) technique. The structural properties of the PLD-grown p-NiO material were analysed by means of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), confirming its crystalline nature and revealing the presence of Ni vacancies, respectively. Hall measurements confirmed the p-type semiconducting nature of the NiO thin film having a carrier concentration of 8.4 × 1016 cm-3. The current-voltage (I-V) characteristics of the p-NiO/n-Si heterojunction photodevice were investigated under different wavelengths ranging from UV to NIR. The self-bias properties under different illuminations of light were also explored systematically. Under self-bias condition, the photodiode exhibits excellent responsivities of 12.5 mA.W-1, 24.6 mA.W-1 and 30.8 mA.W-1 with illumination under 365 nm, 485 nm, and 850 nm light, respectively. In addition, the time dependency of the photoresponse of the fabricated photodevice has also been investigated and discussed thoroughly.

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Section: Resultsmentioning

confidence: 99%

“…The value of I 0 is obtained by extrapolation of the slope of the straight line of the log(I)-V curve at 0 V and can written as [46]:…”

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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