V-Band High Data-Rate I/Q Modulator and Demodulator With a Power-Locked Loop LO Source in 0.15-/spl mu/m GaAs pHEMT Technology

Tsai, Zuo‐Min; Liao, Hung-Ju; Hsiao, Yuan-Hung; Wang, Huei

doi:10.1109/tmtt.2013.2261537

Cited by 18 publications

(8 citation statements)

References 30 publications

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“…Reducing the I/Q imbalance is very important, as it will directly affect the signal quality; it is also directly correlated with IRR. The relationship between I/Q imbalance and IRR can be found in [8], [11], [19], [20], and can be expressed using the following formula:…”

Section: B the Influence Of I/q Impairmentmentioning

confidence: 99%

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A 67-86 GHz Spectrum-Efficient CMOS Transmitter Supporting 1024-QAM With a Process-Variation-Tolerant Design

et al. 2020

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This paper describes a direct-conversion E-band transmitter (TX) in 65-nm CMOS. To demonstrate the feasibility of E-band 1024-quadrature amplitude modulation (QAM), a 67 to 86 GHz direct-conversion CMOS transmitter with broadband image rejection is presented. The transmitter contains an I (in-phase) and Q (quadrature-phase) modulator and a five-stage power amplifier. To achieve a 40 dBc image-rejection ratio (IRR) of the I/Q modulator for E-band, a broadband half-quadrature generator (HQG), which contains a composite right/left-handed (CRLH) based divider, quadrature couplers, and baluns is proposed. For the purpose of minimizing the phase imbalance, phase balance lines are utilized in HQG to achieve a 1-degree phase accuracy under different tuning lines. Subsequently, the reflection can be mitigated by optimizing the impedance matching between the HQG and the mixer core. Meanwhile, because millimeter-wave (MMW) circuits are susceptible to process variations, a process-variation-tolerant design is introduced to mitigate IRR variation, especially under 40 dBc. The transmitter demonstrates a measured flat conversion gain (CG) of 23 ± 2 dB from 56 to 86 GHz. The proposed TX achieves an IRR better than 40 dBc from 67 to 86 GHz (bandwidth of 19 GHz) with a peak IRR of 56.2 dBc at 70 GHz. Furthermore, the proposed TX has exhibited a 6 bit/s/Hz spectral efficiency with 1024-QAM under the orthogonal frequency-division multiplexing (OFDM) modulation format. The 1.129 mm 2 E-band TX achieves a measured output power of 6.5 dBm with a total dc power consumption of 164 mW from a 1.2 V supply voltage. INDEX TERMS CMOS, E-band, half-quadrature generator (HQG), image-rejection ratio (IRR), millimeter-wave (MMW) integrated circuit, process-variation-tolerant design, transmitter (TX), 1024-quadrature amplitude modulation (QAM).

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Section: B the Influence Of I/q Impairmentmentioning

confidence: 99%

“…In [8], the calibration method applied for 64-QAM is to use automatic gain control (AGC) for gain compensation while the phase compensation is manually tuned. This method can achieve a SSR larger than 40 dBc at 51-64 GHz, but the phase error becomes 3.0 • .…”

Section: Introductionmentioning

confidence: 99%

A 67-86 GHz Spectrum-Efficient CMOS Transmitter Supporting 1024-QAM With a Process-Variation-Tolerant Design

et al. 2020

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“…The solution to the IQ mismatch can be provided by a type of calibration technique [116,[147][148][149][150][151]. For the in-phase/quadrature (IQ) mismatch of the IF path, digital [147,148] and mixed-mode [149] techniques are exploited below 2 GHz.…”

Section: Modulatorsmentioning

confidence: 99%

“…By using the characteristics of the high image rejection and good LO signal suppression, the direct-conversion transmitter MMIC demonstrates a 1024-QAM modulated signal (modulation capability) with a data rate of 500 Mb/s and the EVM results are within 1.7% at 65 GHz. Figure 13 shows a comparison between our design and other works of MMW high-order QAM modulation [150][151][152][153].…”

Section: Modulatorsmentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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“…Based on the above features, the authors have proposed new circuit topologies of even harmonic mixers and their applications: even harmonic up-converters with extremely low virtual LO leakage [7], [8], even harmonic modulators with extremely low carrier leakage [9], and even harmonic direct-conversion receivers with low second-order distortion [10]. Since the publication of the authors' initial works, several studies on even harmonic mixers have been reported [11]- [15]. Even harmonic mixers have issues related to their lower output power and higher conversion-loss dependence on the LO power.…”

Section: Introductionmentioning

confidence: 99%

Fundamental Limitations on the Output Power of Balanced Mixers and Even Harmonic Mixers in Modulator Operation

Hashimoto

Itoh

Shimozawa

et al. 2014

IEEE Trans. Microwave Theory Techn.

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A theoretical comparison of fundamental limitations on the output power of balanced diode mixers and even harmonic mixers is presented in this paper. The modulator operation is employed for the formulation. Additionally, the maximum output power, the output power at the 1-dB gain compression point, and the conversion loss of both mixers are formulated. It is theoretically confirmed that even harmonic mixers exhibit output power saturation when there is a high local oscillator power, although balanced diode mixers exhibit no saturation. This saturation is caused by restrictions in the built-in voltage of diodes, and even harmonic mixers therefore have lower output power capability when compared to balanced diode mixers. Derived formulas are confirmed by performing experimental investigations at 100 MHz.

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V-Band High Data-Rate I/Q Modulator and Demodulator With a Power-Locked Loop LO Source in 0.15-/spl mu/m GaAs pHEMT Technology

Cited by 18 publications

References 30 publications

A 67-86 GHz Spectrum-Efficient CMOS Transmitter Supporting 1024-QAM With a Process-Variation-Tolerant Design

A 67-86 GHz Spectrum-Efficient CMOS Transmitter Supporting 1024-QAM With a Process-Variation-Tolerant Design

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Fundamental Limitations on the Output Power of Balanced Mixers and Even Harmonic Mixers in Modulator Operation

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