V&lt;inf&gt;th&lt;/inf&gt; control by halo implantation using the SEN's MIND system

Ninomiya, S.; Kimura, Yoshiki; Kudo, Tetsuya; Ochi, Akihiro; Sato, Fumiaki; Tsukihara, Mitsukuni; Fuse, G.; Sugitani, M.; Tada, Koichi; Kamiyanagi, H.; Shibata, Satoshi

doi:10.1109/iwjt.2009.5166229

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…Many process parameters can influence an 18nm-PMOS fabrication such as halo implantation, halo implantation energy, halo tilt, source/drain implantation, VTH adjustment implantation, compensation implantation, and VTH adjustment energy. Manipulating the dose, energy, and rotation of the implants will alter the profile and electrical characteristics of the devices [3]. The aim was to obtain one of the most optimum VTH value for MOSFET.…”

Section: Introductionmentioning

confidence: 99%

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO₂/TiSi₂18 nm PMOS

et al. 2016

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Abstract. Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO 2 was used as the gate dielectric ad TiO 2 was used as the gate material. The transistor HfO 2 /TiSi 2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in the fabrication process for the method's practicality and ability to be used to suppress short channel effects. The study involved ion implantation methods: compensation implantation, halo implantation energy, halo tilt, and source-drain implantation. Taguchi method is the best optimization process for a threshold voltage of HfO 2 /TiSi 2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations) and noise factors were evaluated by examining the Taguchi's signal-to-noise ratio (SNR) and nominal-the-best for the threshold voltage (VTH). After optimization, the result showed that the VTH value of the 18-nm PMOS device was -0.291339.

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Section: Introductionmentioning

confidence: 99%

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO₂/TiSi₂18 nm PMOS

et al. 2016

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“…For this reason, the Halo structure has been widely adopted in Complementary metal-oxide Semiconductor (CMOS) technology. Ion implantation processes are strong candidates to compensate variations of other processes because ion doses are comparatively easy to control within a wafer [2]. The depth of dopant, concentration and region are determined by the implant dose, energy, tilt and post anneal conditions.…”

Section: Introductionmentioning

confidence: 99%

Impact of Different Dose and Angle in HALO Structure for 45nm NMOS Device

Salehuddin

Ahmad

Hamid

et al. 2011

AMR

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In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using Taguchi experimental design method. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (VTH) results were used as the evaluation variable. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. In this research, oxide growth temperature was the major factor affecting the threshold voltage (69%), whereas halo implant tilt was the second ranking factor (20%). The percent effect on Signal-to-Noice (S/N) ratio of halo implant dose and S/D implant dose are 6% and 5% respectively. As conclusions, oxide growth temperature and halo implant tilt were identified as the process parameters that have strongest effect on the response characteristics. While S/D implant dose was identified as an adjustment factor to get threshold voltage for NMOS device closer to the nominal value (0.150V) at tox= 1.1nm.

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“…Ion implantation processes are strong candidates to compensate variations of other processes because ion doses are comparatively easy to control within a wafer [1]. The depth of dopant, concentration and region are determined by the implant dose, energy, tilt and post anneal conditions.…”

Section: Introductionmentioning

confidence: 99%

Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device

Salehuddin

Ahmad

Hamid

et al. 2010

2010 IEEE Asia Pacific Conference on Circuits and Systems

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In this paper, we investigate the impact of process parameter like halo structure on threshold voltage (V TH ) and leakage current (I Leak ) in 45nm NMOS device. The settings of process parameters were determined by using Taguchi experimental design method. Besides halo implant, the other process parameters which used were Source/Drain (S/D) implant and oxide growth temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to threshold voltage and leakage current are oxide growth temperature (71%) and S/D implant dose (47%) respectively. Whereas the second ranking factor affecting V TH and I Leak are halo implant tilt (15%) and halo implant dose (35%) respectively. As conclusions, S/D implant dose and oxide growth temperature have the strongest effect on the response characteristics. The results show that the V TH for NMOS device equal to 0.150V at tox= 1.1nm. The results show that I Leak after optimizations approaches is 51.8µA/µm.

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V<inf>th</inf> control by halo implantation using the SEN's MIND system

Cited by 5 publications

References 2 publications

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO₂/TiSi₂18 nm PMOS

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO₂/TiSi₂18 nm PMOS

Impact of Different Dose and Angle in HALO Structure for 45nm NMOS Device

Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device

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V<inf>th</inf> control by halo implantation using the SEN's MIND system

Cited by 5 publications

References 2 publications

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi218 nm PMOS

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi218 nm PMOS

Impact of Different Dose and Angle in HALO Structure for 45nm NMOS Device

Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device

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Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO₂/TiSi₂18 nm PMOS

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO₂/TiSi₂18 nm PMOS