Vacancy-oxygen defects in <i>p</i>-type Si1−xGex

Sgourou, E. N.; Londos, C. A.; Chroneos, Alexander

doi:10.1063/1.4896728

Cited by 4 publications

(3 citation statements)

References 39 publications

(47 reference statements)

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“…2a, with the prior RTP at 1250°C, the Cz-Si 1-x Ge x specimen has lower Au s concentration than the Cz-Si counterpart. Accordingly, it is derived that the formation of VO m complexes during the RTP at 1250°C is to a certain extent suppressed in CzSi 1-x Ge x in comparison with that in Cz-Si, which is in agreement with the previous theoretical calculation and experiment results obtained for the electron-irradiated Si 1-x Ge x [15,16,[30][31][32][33]. The reason for the suppressed formation of VO m complexes in Cz-Si 1-x Ge x will be explored later.…”

Section: Evaluation Of Rtp-induced Vo M Complexessupporting

confidence: 85%

“…Markevich et al [14] have found at least three configurations of V-O complexes with distinct levels in Cz-Si 1-x Ge x , among which the most stable configuration consists of a Si-O-Si unit and a Ge-Si reconstructed bond in a vacancy. Sgourou et al [15,16] found that both the VO production and the VO annealing temperature were reduced and, moreover, the conversion of VO into VO 2 is suppressed in Cz-Si 1-x Ge x with respect to the case of Cz-Si. By comparison, the formation of V-O complexes in Cz-Si 1-x Ge x during the high temperature RTP has hardly been investigated so far.…”

Section: Introductionmentioning

confidence: 96%

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Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

Dong

Zhao

et al. 2015

J Mater Sci: Mater Electron

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Rapid thermal processing (RTP) induced vacancy-oxygen (VO m m C 2) complexes can act as the precursors for oxide precipitate nucleation thus enhancing oxygen precipitation (OP) in Czochralski silicon (Cz-Si). In our preceding work, we have reported that 10 20 cm -3 germanium (Ge)-doping in Cz-Si facilitates the formation of VO m complexes during the high temperature RTP. Then, how the even higher Ge-doping at 10 21 cm -3 in Cz-Si affects the formation of VO m complexes during the RTP is an interesting issue to be addressed. Actually, such high Ge-doping in Cz-Si forms Cz-Si 1-x Ge x alloys. In the present work, we have investigated the formation of VO m complexes in Cz-Si 1-x Ge x (x = 0.035-0.038) wafers subjected to the high temperature RTP. The Cz-Si 1-x Ge x wafers are found to exhibit much weaker OP than Cz-Si counterparts when subjected to the same two-step (nucleation-growth) anneal following the high temperature RTP, indicating that the formation of VO m complexes during the RTP is suppressed in Cz-Si

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Section: Evaluation Of Rtp-induced Vo M Complexessupporting

confidence: 85%

Section: Introductionmentioning

confidence: 96%

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

Dong

Zhao

et al. 2015

J Mater Sci: Mater Electron

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“…Furthermore, the VO 2 band is largerly suppressed in the latter sample. Interestingly, the suppression of the VO 2 band due to Pb doping (with [Pb] = 10 18 cm -1 ) is almost the same with the suppression of VO 2 in n-type and p-type Si 1-x Ge x material [32,33] with x = 5.6 % that is with Ge content at least three orders of magnitude larger than that of Pb. Figure 3 shows the production of the VO, C i O i and C i C s / C i O i versus covalent radius of the isovalent dopant.…”

Section: Resultssupporting

confidence: 53%

Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

Londos

Angeletos

Sgourou

et al. 2015

J Mater Sci: Mater Electron

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Carbon and oxygen associated defects such as VO, C i O i and C i C s are common in electron irradiated silicon. Their presence can affect the material and electronic properties of Si. A way to limit their impact and understand their behavior is through doping with large isovalent dopants. The aim of the present study is to investigate and compare the effect of Ge and Pb doping on VO, C i O i and C i C s defects in electron irradiated Si mainly by using Fourier transform infrared spectroscopy in conjunction with recent density functional theory calculations. It was determined that the production of these defects is reduced by the presence of the isovalent impurity and more significantly for Pb doping as compared to Ge doping. Upon annealing the conversion to secondary defects (in particular VO to VO 2 and C i O i to C s O 2i ) is also affected by the isovalent dopants. Interestingly, the conversion ratio a VO2 /a VO is reduced with the increase of the isovalent radius, whereas the a CsO2i /a CiOi is enhanced. Theoretical calculations were used to corroborate these findings.

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Impact of neutron radiation induced defects on the surge current robustness of silicon carbide P‐intrinsic‐N diodes

Tan,

Zhang,

et al. 2024

Electron

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Surge current (SC) capability is one of the main aspects of reliability for silicon carbide (SiC) power devices. In this work, the influences of neutron radiation‐induced defects on the SC capability and reliability of SiC P‐intrinsic‐N (PiN) diodes were comprehensively investigated. It was found that the surge capability of the diodes can be deteriorated even under the slightly enhanced formation of carbon‐vacancy‐related Z1/2 and EH6/7 defects introduced by neutron irradiation. Surprisingly, it was found that the forward voltage (VF) decreases with the increased SC and the stress cycles in the irradiated diodes, which is usually found to increase under the SC tests and attributed to the bipolar degradation (BPD). By using technology computer‐aided design simulation and deep‐level transient spectroscopy characterization, it was found that the significant self‐heating during surge stress leads to the annealing effect on the Z1/2 defects through the promoted recombination with the nearest and second neighbor carbon interstitials injected by irradiation, which thus plays a dominant role in the decrease of VF over the BPD.

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Vacancy-oxygen defects in p-type Si1−xGex

Cited by 4 publications

References 39 publications

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

Impact of neutron radiation induced defects on the surge current robustness of silicon carbide P‐intrinsic‐N diodes

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