Valence-band energy spectrum of solid solutions of narrow-gap-semiconductorBi2−x

V. A. Kulbachinskii

¹

,

M. Inoue

²

,

Minoru Sasaki

³

et al.

Influence of Sn on Galvanomagnetic Properties of Layered p-(Bi1?xSbx)2Te3 Semiconductors

“…This assumption is supported by the data on Ag doped Sb 2 Te 3 [20] in which the dependence of S H on (1/eR H ) 2/3 is linear up to higher hole concentration. Thus much more tin atoms are necessary to make an impurity band in Sb 2 Te 3 as compared with Bi 2 Te 3 [3,4,13]. This is not surprising because the initial concentration of holes in Sb 2 Te 3 is about one order of magnitude higher than in Bi 2 Te 3 .…”

“…In accordance with the ellipsoidal model [12][13][14], the general form of the Fermi surface in the UVB may be described by the following expression:…”

Magnetoinfrared spectroscopic study of thinBi2Te3single crystals

“…The drop-off frequency (∼1200cm −1 ) implies a bandgap around 0.15eV, consistent with that reported in literature. 31,32 The parallel surfaces of the tape and the Bi 2 Te 3 flakes cause a series of etalon oscillations. The period of the oscillation depends on the magnetic field owing to the field-dependent refractive index of Bi 2 Te 3 .…”

“…31 The bandgap of the upper valence band is given as E g,up 0.15eV. 32 The effective mass m * h,low and the bandgap E g,low of the lower valence band are left as fitting parameters. The transition energy ω c can then be attributed to the transition from the n = 1 LL in the lower valence band to the n = 0 LL in the upper valence band.…”

Influence of Sn on the thermoelectric properties of (BixSb1−x)2Te3 single crystals

“…[7][8][9][10][11][12][13]. Quantum oscillations of the Hall resistance in a magnetic filed up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(B 1 À x Sb x ) 2 Te 3 have been studied in Ref.…”