Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy

Su, Shi; Lu, Yinmei; Zhang, Z. Z.; Shan, Chung; Li, B. H.; Shen, Dezhen; Ye, Bin; Zhang, J. Y.; Zhao, Dong; Fan, X.W.

doi:10.1063/1.2977478

Cited by 61 publications

(45 citation statements)

References 23 publications

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“…25 This band gap difference is distributed to 70% to the conduction band and 30% to the valence band (as for AlGaN/GaN a type-I alignment). 26 So even for the highest composition, an offset in the conduction band between Mg x Zn 1Àx O and Cu 2 O of 0.2 eV remains. …”

mentioning

confidence: 99%

The band alignment of Cu2O/ZnO and Cu2O/GaN heterostructures

Kramm

Läufer

Reppin

et al. 2012

Applied Physics Letters

101

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Using photoelectron spectroscopy, we investigate the band alignments of the Cu2O/ZnO heterointerface and compare the findings with the corresponding values for Cu2O/GaN. While for Cu2O/ZnO, we find a valence band offset (VBO) of 2.17 eV and a conduction band offset (CBO) of 0.97 eV, both values are considerably reduced for Cu2O/GaN where the numbers are 1.47 eV (VBO) and 0.24 eV (CBO), respectively. The large CBO between ZnO and Cu2O will very likely result in low photovoltaic power conversion efficiencies as is the current status of Cu2O/ZnO solar cells.

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mentioning

confidence: 99%

The band alignment of Cu2O/ZnO and Cu2O/GaN heterostructures

Kramm

Läufer

Reppin

et al. 2012

Applied Physics Letters

101

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“…Another important and debated quantity is the conduction band offset at heterointerfaces DE C =DE g : Earlier works suggested a ratio of about 0.9 57,58 for ZnO/MgZnO, but the present consensus is for a smaller value in the range of 0.6 to 0.7. [59][60][61] In the absence of reliable experimental determinations for ZnO/BeZnO interfaces, a band offset DE C =DE g ¼ 0:65 has been used in the present work for both MgZnO and BeZnO heterojunctions.…”

Section: Models For the Materials Propertiesmentioning

confidence: 99%

Electronic and Optical Properties of Mg x Zn1−x O and Be x Zn1−x O Quantum Wells

Furno

Chiaria

Penna

et al. 2010

Journal of Elec Materi

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As a preparatory step toward establishing reliable numerical design tools for ZnO-based optoelectronic devices, we have reassessed the available information on material parameters relevant for the simulation of light-emitting diodes (LEDs) with active regions including ZnO, MgZnO, and BeZnO layers. The impact of different approximations for the electronic structure and the interface polarization charge on the optical properties of bulk ZnO and ZnO/MgZnO quantum wells has been evaluated, and a consistent set of parameters has been used not only for systematic comparison of ZnO/MgZnO and ZnO/BeZnO single quantum well structures but also for the first simulation of a realistic ZnO/BeZnO multiple quantum well LED.

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“…According to the X-ray photoelectron spectroscopy (XPS) data of valence band offset of ZnO/Zn 0.85 Mg 0.15 O, the E g of Zn 0.85 Mg 0.15 O and ZnO is 3.68ev and 3.37ev and ∆Ec is 0.18ev. 5 The 2DEG created by ZnMgO ADB exist in the space charge region of ZnO p-n junctions on the interface between p-type and n-type layer based on the Hall-effect data.…”

Section: Methodsmentioning

confidence: 99%

“…Based on the realization of p-type ZnO thin film, the ZnO p-n homojunctions can be prepared. 1 Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications like light-emission diodes, 2-4 laser diodes, 5 photo detectors, [6][7][8] and transistor. 9 Multiple quantum barriers (MQB) structure can be used to adjust the optical and electrical properties of ZnO films and heterostructures.…”

Section: Introductionmentioning

confidence: 99%

The ZnO p-n homojunctions modulated by ZnMgO barriers

et al. 2015

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In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 103 cm2V −1s−1 based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve.

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Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy

Cited by 61 publications

References 23 publications

The band alignment of Cu2O/ZnO and Cu2O/GaN heterostructures

The band alignment of Cu2O/ZnO and Cu2O/GaN heterostructures

Electronic and Optical Properties of Mg x Zn1−x O and Be x Zn1−x O Quantum Wells

The ZnO p-n homojunctions modulated by ZnMgO barriers

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