Valley-engineered ultra-thin silicon for high-performance junctionless transistors

Kim, Seung-Yoon; Choi, Sung‐Yool; Hwang, Wan Sik; Cho, Byung Jin

doi:10.1038/srep29354

Cited by 3 publications

(1 citation statement)

References 28 publications

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“…Accordingly, it is still a challenge to achieve ultra-narrow constrictions on vertically aligned Si micro/nanostructures following the traditional top-down procedures. Thermal oxidation is an effective method for 'fabricating' Si nanostructures such as particles [18,19], wires [20,21] and membranes [22,23]. It has been clearly demonstrated that the stress induced by the mismatch of volume between the Si atom (Ω Si : 20 Å 3 ) and the SiO 2 molecule (Ω SiO2 : 45 Å 3 ) shows an obvious impact on the oxidation rate [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Non-uniaxial stress-assisted fabrication of nanoconstriction on vertical nanostructured Si

Zeng¹,

Li²,

Huang³

et al. 2019

Nanotechnology

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Vertically aligned Si nanoconstrictions have potential for applications of electronic, photonic and phononic nanodevices. Herein, we report a featured method by utilizing the non-uniaxial tangential tension stress (σ T ) at the Si surface of a vertical hyperbolic Si/SiO 2 core-shell nanostructure during thermal oxidation to achieve well defined Si nanoconstrictions. A thermal oxidation model was proposed to describe the correlations between σ T and the structural parameters of the hyperbolic nanostructure, i.e. oxide thickness (t ox ), sidewall curvature radius (R 0 ) and neck diameter (2r A0 ). Numerical simulations indicated that the Si surface at the position with the narrowest diameter (neck position) has the highest σ T (∼GPa) and presents a gradient distribution at both ends. By means of stress regulation, an array of well defined Si nanoconstrictions about 10 nm in diameter and about 34 nm in length was obtained. The experimental findings demonstrated that the high σ T would induce a nanofracture and thus a local oxidation to form a nanoconstriction, self-aligned at the neck position. The finding notably extends the capability of stress-assisted 'nanofabrication' of Si via thermal oxidation.

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Section: Introductionmentioning

confidence: 99%

Non-uniaxial stress-assisted fabrication of nanoconstriction on vertical nanostructured Si

Zeng¹,

Li²,

Huang³

et al. 2019

Nanotechnology

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Strain effects on thermal transport and anisotropy in thin-films of Si and Ge

Foss

Akšamija

2016

Journal of Applied Physics

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As dimensions of nanoelectronic devices become smaller, reaching a few nanometers in modern processors, CPU hot spots become increasingly more difficult to manage. Applying mechanical strain in nanostructures provides an additional tuning mechanism for both electronic band structures and phonon dispersions that is independent of other methods such as alloying and dimensional confinement. By breaking crystal symmetry, strain increases anisotropy. We present thermal conductivity calculations, performed in thin Si and Ge strained films, using first principles calculations of vibrational frequencies under biaxial strain, along with a phonon Boltzmann transport equation within the relaxation time approximation. We find that, while in-plane transport is not strongly dependent on strain, the cross-plane component of the thermal conductivity tensor shows a clear strain dependence, with up to 20% increase (decrease) at 4% compressive (tensile) strain in both Si and Ge. We also uncover that strain emphasizes the anisotropy between in-plane and cross-plane thermal conductivity across several orders of magnitude in film thickness.

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Phonon Transport at Boundaries and Interfaces in Two-Dimensional Materials

Foss¹

2018

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Valley-engineered ultra-thin silicon for high-performance junctionless transistors

Cited by 3 publications

References 28 publications

Non-uniaxial stress-assisted fabrication of nanoconstriction on vertical nanostructured Si

Non-uniaxial stress-assisted fabrication of nanoconstriction on vertical nanostructured Si

Strain effects on thermal transport and anisotropy in thin-films of Si and Ge

Phonon Transport at Boundaries and Interfaces in Two-Dimensional Materials

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