Van der Waals Integration Based on Two‐Dimensional Materials for High‐Performance Infrared Photodetectors

Wang, Haoyun; Li, Zexin; Li, Dongyan; Chen, Ping; Pi, Lejing; Zhou, Xing; Zhai, Tianyou

doi:10.1002/adfm.202103106

Cited by 166 publications

(133 citation statements)

References 226 publications

(328 reference statements)

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“…5 Considering the absorption by the atmosphere, MWIR and LWIR are most commonly used in the military and civilian fields. 6 At present, the commercial infrared photodetectors are mainly made from small bandgap compound semiconductors (such as InGaAs, PbS, InSb, and HgCdTe), 7−9 strained-layer superlattices, and quantum well structures. 10,11 However, cryogenic cooling is typically required for high-performance infrared photodetectors, leading to high power consumption and increased maintenance cost.…”

Section: ■ Introductionsupporting

confidence: 88%

“…Infrared photodetectors have always been a research focus among the scientific community because of their wide-ranging applications in the military, industrial and agricultural production, environmental monitoring, and biomedicine. − Generally, infrared radiation can be divided into near-infrared (NIR, 0.76–1.1 μm), short-wave infrared (SWIR, 1–3 μm), medium-wave infrared (MWIR, 3–6 μm), long-wave infrared (LWIR, 6–25 μm), far-infrared (FIR, 25–100 μm), and submillimeter wave (100–1000 μm) . Considering the absorption by the atmosphere, MWIR and LWIR are most commonly used in the military and civilian fields . At present, the commercial infrared photodetectors are mainly made from small bandgap compound semiconductors (such as InGaAs, PbS, InSb, and HgCdTe), − strained-layer superlattices, and quantum well structures. , However, cryogenic cooling is typically required for high-performance infrared photodetectors, leading to high power consumption and increased maintenance cost.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of 2D PdSe₂/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

Han

et al. 2021

ACS Appl. Mater. Interfaces

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Room-temperature infrared photodetectors are in great demand because of their vitally important applications in the military and civilian fields, which has inspired intensive studies in recent decades. Here, we present the fabrication of a large-size PdSe 2 /CdTe mixed-dimensional van der Waals (vdW) heterojunction for room-temperature infrared detection. Taking advantage of the wide light absorption of the multilayer PdSe 2 , high-quality vdW interface, and unique mixed-dimensional device geometry, the present device is capable of detecting an ultrawide light up to longwave infrared (LWIR) of 10.6 μm at room temperature. In addition, our photodetector exhibits a good capability to follow short pulse infrared signals with a quick response rate of 70 ns, a large responsivity of 324.7 mA/W, and a reasonable specific detectivity of 3.3 × 10 12 Jones. Significantly, the assembled photodetector is highly sensitive to a polarized infrared light signal with a decent polarization sensitivity of 4.4. More importantly, an outstanding LWIR imaging capability based on the PdSe 2 /CdTe vdW heterojunction at nonrefrigeration condition is demonstrated. Our work paves a novel route for the design of highly polarization-sensitive, room-temperature infrared photodetectors.

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Section: ■ Introductionsupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Fabrication of 2D PdSe₂/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

Han

et al. 2021

ACS Appl. Mater. Interfaces

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“…performance of ultraviolet photodetectors is not enough for the requirement. Until now, various methods have been exploited to improve the property of ultraviolet photodetectors, like van der Waals heterojunction integration, [201][202][203][204][205][206][207][208][209][210] ferroelectric modulation, [211] surface functionalization, [212] and doping. [213][214][215]…”

Section: Solid-state Photodetectormentioning

confidence: 99%

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

et al. 2022

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Over the past decades, UWBG semiconductors employed in (opto)electronics are dominated by the traditional bulk materials, which have been extensively investigated and widely commercialized, such as Ga 2 O 3 , [1][2][3][4] diamond, [5][6][7] Mg x Zn 1-x O, [8] indium tin oxide (ITO), [9] indium gallium zinc oxide (IGZO), [10] III-nitride (GaN, AlN, Al x Ga 1-x N). [11] Furthermore, various methods have been used to improve devices performance via extensive research efforts, such as localized surface plasmon, [12,13] bandgap engineering, [14,15] array, [16][17][18] heterojunction. [19][20][21][22][23] However, in the post-Moore era, the traditional UWBG semiconductor devices with large size, high power and high cost cannot meet the future requirements of high-performance (opto)electronic devices. [24,25] In this regard, desingings of low-dimensional semiconductor material systems with novel structure and good adaptability have become a research hotspot.Successful exfoliation of graphene [38] in 2004 has tremendously boosted research on various 2D materials, including transition metal dichalcogenides (TMDs), [39][40][41][42][43][44][45] black phosphorous (b-P), [46][47][48] black arsenic (b-As), [49,50] phosphorous compounds, [51,52] hexagonal boron nitride (h-BN), [53][54][55][56] and Mxene. [57] Compared to devices based on narrow bandgap semiconductors, ultraviolet photodetectors based on 2D UWBG semiconductors need not costly high-pass optical filters to block out visible and infrared photons and without cooled to reduce dark current, leading to a significant loss of effective area of the system. Hence, the emergence of devices based on 2D ultrawide bandgap semiconductors has opened up an avenue to circumvent the dilemma mentioned above.The group metal chalcogenides (GaS, GaSe) are known for wide-range bandgap and are among the first to be investigated. [58,59] Then, the study quickly expand to other chalcogenide and has further inspired attention on other compounds, such as metal oxyhalides, metal nitrides, metal oxides, and Dion-Jacobson perovskite oxides. [28,[33][34][35][60][61][62][63][64][65][66][67][68][69][70][71][72][73][74] Atomically thin 2D UWBG semiconductor materials have sky-rocketing developed into a unique subdiscipline in the last decade, offering new possibilities for designing and fabricating (opto)electronic devices with novel functionalities at the nanoscale (Figure 1). Up to date, studies on 2D 2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investiga...

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“…S17 (ESI†), respectively. With the regulation of laser power, one can collect the power-dependent photocurrent curves and obtain the responsivity 57–60 and detectivity 61–64 of a photodetector. We have obtained a responsivity of 201 mA W −1 and a detectivity of 5.3 × 10 9 Jones from Fig.…”

Section: Introductionmentioning

confidence: 99%

A wafer-scale two-dimensional platinum monosulfide ultrathin film via metal sulfurization for high performance photoelectronics

et al. 2022

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Van der Waals Integration Based on Two‐Dimensional Materials for High‐Performance Infrared Photodetectors

Cited by 166 publications

References 226 publications

Fabrication of 2D PdSe₂/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

Fabrication of 2D PdSe₂/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

A wafer-scale two-dimensional platinum monosulfide ultrathin film via metal sulfurization for high performance photoelectronics

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Van der Waals Integration Based on Two‐Dimensional Materials for High‐Performance Infrared Photodetectors

Cited by 166 publications

References 226 publications

Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

A wafer-scale two-dimensional platinum monosulfide ultrathin film via metal sulfurization for high performance photoelectronics

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Fabrication of 2D PdSe₂/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

Fabrication of 2D PdSe₂/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection