Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

Sigai, A. G.; Nuese, C. J.; Enstrom, R. E.; Zamerowski, T. J.

doi:10.1149/1.2403606

Cited by 59 publications

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“…However, the PL intensity of Te-doped Ga 0.74 In 0.26 P significantly degrades at n 5 × 10 18 cm −3 . This degradation is likely caused by the formation of inactive complexes related to the Te-doping [28]. As tellurium is a large n-type dopant compared with other dopants (i.e., Si), it may distort the sublattices of III-V compounds and form non-radiative recombination centers at high Te-doping concentration.…”

Section: Resultsmentioning

confidence: 99%

Direct bandgap photoluminescence from n-type indirect GaInP alloys

et al. 2017

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This work studies Te doping effects on the direct bandgap photoluminescence (PL) of indirect Ga x In 1−x P alloys (0.72 ≤ x ≤ 0.74). The temperature-dependent PL shows that the energy difference between direct Γ valley and indirect X valleys is reduced due to the bandgap narrowing (BGN) effect, and the direct band transition gradually dominates the PL spectra as temperature increases. Carrier thermalization has been observed for Te-doped Ga x In 1−x P samples, as integrated PL intensity increases with increasing temperature from 175 to 300 K. The activation energy for carrier thermalization is reduced as doping concentration increases. Both BGN effect and carrier thermalization contribute to the carrier injection into the Γ valley. As a result, the direct band transition is enhanced in the Te-doped indirect Ga x In 1−x P alloys. Therefore, the PL intensity of the Ga 0.74 In 0.26 P sample with active doping concentration of 9 × 10 17 cm −3 is increased by five times compared with that of a nominally undoped sample. It is also found that the PL intensity is degraded significantly when the doping concentration is increased to 5 × 10 18 cm −3. From cross-section transmission electron microscopy, no large dopant clusters or other extended defects were found contributing to this degradation.

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Section: Resultsmentioning

confidence: 99%

Direct bandgap photoluminescence from n-type indirect GaInP alloys

et al. 2017

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“…Die bisher verwendeten Methoden lassen sich im System Ga, In, P , H, C1 beschreiben (JOYCE et al;NUESE et al , 1972NUESE et al , 1974SIGAI et al;KRESSEL et al;ENSTROM et al;OHKI et al gewisse Abweichungcn sind jedoch in dcr Zeitkonstanz dieser Quclle gefunden wordcn (BAN). Die Anwendung ciner In, Ga-Schmelzedie einc Herabsetzung des HC1-Vcrhaltnis~cs zwischcn beidcn Quellen ermiiglicht und damit dcr Problem dcr Dosierung erleichtcrtist sichcr cin Kompromifi zwischen Dosierungsschwierigkeiten und Stabilitat der Quellen.…”

Section: Praparationunclassified

Herstellung und kristallographische Eigenschaften von Ga_xIn₁₋_xP‐Epitaxieschichten

Noack

Kies

1976

Cryst Res and Technol

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Es wird eine Methode zur Herstellung von Ga,Inl -,P-Schichten durch Anwendung chemischer Transportreaktionen unter Verwendung einer In, Ga-Schmelze und InP als Quellen sowie HCI als Transportmittel beschrieben. Die 2-Abhangigkeit der Variationsbreite des Beugungswinkels wird als durch thermodynamische Eigenschaften des Systems InP-GaP sowie des Abscheidungsvorganges begriindet und als Inhomogenitat im Sinne einer Abweichung vom Verhalten eines idealen Mischkristalls gedeutet.OnACaH MeTOH U3rOTOBJIeHAR CJIO&B Ga,Inl -,P IlOCpeACTBOM IlpUMeHeHUH XAMU4eCKHX TpaflCllOpTHbnr PeaKUAeP, rAe HCnOJIb3yIOTCR HCl KaK TpaHCIIOpTApyIomUfi ra3 A A B a HCTOgHUKa -InP H pa3nJlaB (In, Ga). 3aBHCHMOCTb luHpMHbI PeHTreHOBCKHX nH@@paK-WOHHbIX pe@JleKCOB OT X 06%HCHseTCR TepMOHHHaMU'leCKHMH CBOBCTBBMH npOUeCCa OCaWAeHUH U CUCTeMbl InP-Gap. TaKym 3aBUCAMOCTb MOWHO PaCCMaTpUBaTb KBK HeOA-HOPOAHOCTM, rxommimquem n3-3a OTKnoHeHm OT noBeneHm EiHeaabHoro Tsepaoro pacTBopa.

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“…In cases where a bromine-methanolphosphoric etch (6) was used to remove selected portions of the Inl-xGaxP layers, the photoluminescence characteristics were not altered appreciably by the etching process. In cases where a bromine-methanolphosphoric etch (6) was used to remove selected portions of the Inl-xGaxP layers, the photoluminescence characteristics were not altered appreciably by the etching process.…”

Section: Photolumlnescencementioning

confidence: 99%

“…The manner in which the carrier concentrations were controlled has been described previously (6). For these samples, the alloy composition in the epitaxial layer was graded smoothly between the GaP substrate and the desired final portion of the epitaxy (where x ~-0.5-0.6) at a rate of typically 1-2% InP/~m.…”

Section: Optimization Of Donor and Acceptor Concentrationsmentioning

confidence: 99%

“…In the first part of our recent study (6), refinements in the Inl-~GaxP vapor-growth technology have been described which result in epitaxial layers with significantly improved compositional homogeneity and crystalline perfection, as well as reduced impurity contamination relative to our earlier vapor-grown layers. In the present paper, we treat in detail the optimization of donor and acceptor concentrations used for the vapor-grown p-n junctions, and describe the photoluminescence and electroluminescence characteristics of these structures.…”

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confidence: 96%

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Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

Nuese¹,

Sigai

Abrahams³

et al. 1973

J. Electrochem. Soc.

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Inl-xGaxP epitaxial layers, prepared by an improved vapor-phase growth technique, have been evaluated by photoluminescence measurements and by transmission electron microscopy. Maximum photoluminescence intensities for So-and Zn-doped Inl-xGa~P layers (0.5 < x <~ 0.6), are observed at carrier concentrations of 1 • 1017 and 3 • 10 TM cm -3, respectively. At higher concentrations, a severe degradation in the photoluminescence intensity occurs, concurrent with the appearance (by TEM) of precipitates in concentrations of about 1014 cm -a. For Zn-doped Inl-xGa~P, the precipitate has been identified as ZnsPz from its electron diffraction pattern. The luminescence spectra from the vapor-grown layers at 300~ consist of a high-energy peak, attributed to band-to-band recombination, and a low-energy peak, located 0.4 to 0.5 eV less than bandgap. The low-energy peak increases with Se donor concentration and with alloy composition, x, but is typically orders of magnitude less intense than the bandgap peak. Electroluminescent p-n junctions prepared with optimum donor and acceptor concentrations have yielded external quantum efficiencies between 5 and 10 • 10 -4 (unencapsulated) for emission between 6150 and 6600A. From such junctions, laser diodes have been fabricated which emit orange coherent radiation between 6105 and 6150A with threshold currents as low as 4000 A/cm ~ (at 77~ ~This estimate assumes a minority carrier diffusion length of 1 /zrn and a forward voltage of 2V. 956) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.198.30.43 Downloaded on 2015-02-18 to IP

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Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

Cited by 59 publications

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Direct bandgap photoluminescence from n-type indirect GaInP alloys

Direct bandgap photoluminescence from n-type indirect GaInP alloys

Herstellung und kristallographische Eigenschaften von Ga_xIn₁₋_xP‐Epitaxieschichten

Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

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Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

Cited by 59 publications

References 0 publications

Direct bandgap photoluminescence from n-type indirect GaInP alloys

Direct bandgap photoluminescence from n-type indirect GaInP alloys

Herstellung und kristallographische Eigenschaften von GaxIn1−xP‐Epitaxieschichten

Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

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Herstellung und kristallographische Eigenschaften von Ga_xIn₁₋_xP‐Epitaxieschichten