Vapor–liquid–solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy

Bhunia, S.; Kawamura, Teruo; Fujikawa, Shinya; Nakashima, Hiroshi; Furukawa, Katsuko; Torimitsu, Keiichi; Watanabe, Yoshio

doi:10.1016/j.tsf.2004.06.101

Cited by 52 publications

(56 citation statements)

References 11 publications

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“…As grown at 9 K 1.44 100 ϳ60 HF treated at 9 K 1.43 58 ϳ250 As grown at 293 K direction, 15 although the orientation of the nanowire with respect to the electron beam is unsuitable for their observation in the images shown here. In the single-nanowire images in Figs.…”

Section: Relative Intensitymentioning

confidence: 98%

Enhanced luminescence from catalyst-free grown InP nanowires

Mattila¹,

Hakkarainen²,

Lipsanen³

et al. 2007

Applied Physics Letters

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The surface effects in the optical properties of catalyst-free grown InP nanowires are investigated. Both as-grown nanowires and nanowires treated with hydrofluoric acid are studied using low- and room-temperature continuous-wave and time-resolved photoluminescence measurements and transmission electron microscopy. It is shown that the room-temperature photoluminescence intensity is increased by two orders of magnitude after the surface treatment, and that there is also a significant increase in the double-exponential photoluminescence decay time.

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Section: Relative Intensitymentioning

confidence: 98%

Enhanced luminescence from catalyst-free grown InP nanowires

Mattila¹,

Hakkarainen²,

Lipsanen³

et al. 2007

Applied Physics Letters

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“…Bhunia et al [31] carried out research work on vertically aligned and surface mounted InP NWs growth using gold nanoparticle-assisted MOVPE-VLS technique. Semiconducting InP wafers were used as a substrate over which the solution was spread.…”

Section: Synthesis Of Indium Phosphide Nanowiresmentioning

confidence: 99%

“…The same precursors and conditions were followed as reported earlier [31,32,52]. For characterization, SEM was performed in order to find the NWs dependence on the growth temperature in terms of NWs orientation and dimensions.…”

Section: Synthesis Of Indium Phosphide Nanowiresmentioning

confidence: 99%

Indium phosphide nanowires and their applications in optoelectronic devices

Zafar¹,

Iqbal²

2016

Proc. R. Soc. A.

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Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III-V indium phosphide (InP) nanowires (NWs) using vapourand solution-phase approaches has been discussed. Doping and core-shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed.

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“…However, most NWs reported are grown in the direction perpendicular to that of the close-packed planes in the crystal structure, i.e., in the h111i direction for zincblende (ZB) or the h0001i direction for wurtzite (WZ), in which the NWs commonly have planar stacking faults (SFs), leading to a faulted crystal or even a mixture of ZB/WZ crystal structures. [10][11][12][13][14][15] Although SFs have been found to contribute to many phenomena, 12,15 they could significantly affect the electronic and optical properties 13,[16][17][18][19] of nanowires. Zincblende nanowire growth in the h100i direction, which has seldom been reported for InP, 20 is of particular interest since such wires are inherently free from SFs and represents an ideal ZB single crystal.…”

mentioning

confidence: 99%