Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3

Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3

“…The FWHM values of seed substrates used in this study were quite broad (289 arcsec). However, we reported in the previous paper that a high-crystallinity epilayer could be grown on a high-crystallinity seed substrate (107-110 arcsec) grown by Na flux method [12]. Figs.…”

“…Furthermore, the growth rate still needs to be increased to achieve bulk growth. The low growth rate reported in the previous paper was probably due to the low Ga 2 O partial pressure ðP Ga 2 O ¼ 8:6PaÞ [12]. In this study, we investigated the dependence of the surface morphology, growth rate, crystallinity and oxygen impurity concentration on the growth temperature and P Ga 2 O .…”

“…GaN epitaxial growth was performed in a horizontal quartz tube (ID: |34 mm) surrounded by two resistive heaters, as reported in Ref. [12]. The seed substrate and a stainless steel tube (ID: |13 mm) containing Ga 2 O 3 powder were placed in the growth zone and the source zone, respectively.…”

“…In a previous study, we reported growing GaN crystals using the reaction between Ga 2 O vapor and NH 3 , as shown in the following equation [12,13]:…”

PVT growth of GaN bulk crystals

“…Using the volatile suboxide Ga 2 O by reducing Ga 2 O 3 powder with H 2 gas at 1000 1C, a growth rate of 6 mm/h was achieved, a value which is not reasonable for bulk crystal growth. Nevertheless, the oxygen doping level was surprisingly low (1.5 Â 10 18 atoms/cm 3 ) [11] for this approach. In this context the ''pseudo-halide vapour phase epitaxy'' (PVPE) process was found to be a new method.…”