Vapour pressure and heat capacities of metal organic precursors, Y(thd)3 and Zr(thd)4

Vapor pressure of germanium precursors

“…Both the studied precursors Ge(OCH 3 ) 4 and Ge(OC 2 H 5 ) 4 were supplied by SAFC Hitech-Sigma Aldrich. Ge(OCH 3 ) 4 and Ge(OC 2 H 5 ) 4 are liquids in the temperature range 259-303 K. The degassing of samples is a prerequisite for correct vapor pressure measurement using the static method.…”

“…Vapor pressure data obtained using the static method may also systematically deviate due to insufficient degassing of samples. In this work, we report the vapor pressure data for two germanium precursors tetrakis(methoxy)germanium (Ge(OCH 3 ) 4 ) and tetrakis(ethoxy)germanium (Ge(OC 2 H 5 ) 4 ) in the technologically important interval 259-303 K. To our knowledge this is the first time that the vapor pressure data for these precursors are reported in this temperature range.…”

“…In particular, volatility data and a detailed vapor pressure equation is essential for controlled precursor dosimetry. Our laboratory has been involved in systematic measurement of vapor pressure of new as well as recently available high-quality precursors used for MOVPE [2][3][4][5][6] for which the data on vapor pressure are missing and/or the data were measured a long time ago and reflect the state of purity and measuring techniques available then. Vapor pressure data obtained using the static method may also systematically deviate due to insufficient degassing of samples.…”

Measurement of vapour pressure of In-based metalorganics for MOVPE

“…The vapour pressure was measured by a static method using a new apparatus (see [12]) as shown in Fig. 1.…”

Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony

“…Therefore, in 2003 we launched a long-term research project aiming at systematic and accurate vapor pressure measurements of metalorganic precursors used for epitaxial techniques. Since then, a series of increasingly improved vapor pressure apparatuses capable of measuring reactive and toxic materials have been constructed in our laboratory [1][2][3][4] and the vapor pressures of the precursors of Ga, Al, Sb, Zn, Si, In, Y, Zr, Ge, and Hf have been determined [1,3,[5][6][7][8][9][10][11]. A recent compendium covering phase transition enthalpy measurements of organic and organometallic compounds [12] gives a comprehensive overview of the literature sources reporting vapor pressures of metalorganic precursors in the period 1880-2010 and we recommend to consult it first when looking for vapor pressure data for these materials.…”