Variable-Temperature Electrical Measurements of Zinc Oxide/Tin Oxide-Cosubstituted Indium Oxide

Abstract

The electrical conductivity, Hall effect, and thermoelectric coefficient of Zn/Sn-cosubstituted In2O3 (In2 - 2 x Sn x Zn x O3 - δ), undoped In2O3, and indium−tin oxide (ITO) were studied vs cation composition, state of reduction, and measurement temperature (over the range of 4.2−340 K). Carrier contents and mobilities were determined from the Hall coefficient and conductivity in each case. In2 - 2 x Sn x Zn x O3 - δ displays conductivities up to 1 order of magnitude lower than ITO, and the conductivity of the material decreases with increasing cosubstitution, from approximately 860 to 235 S/cm. Reduction of the materials under flowing H2/N2 increases their carrier concentrations and therefore their conductivities. These results are discussed in terms of possible defect and transport models.

Sintering behaviors and electrical properties of transparent conducting In6Sn2–x ZnxO13–x ceramics with different Sn/Zn ratio

“…The carrier concentration was almost constant within the experimental error range in all the compositions. In the case of simultaneous addition of Sn 4+ and Zn 2+ in In 2 O 3 , it was reported that the carrier concentration increased as the amount of simultaneous addition of them decreased, which was not clearly explained [15]. In the current study, however, it is concluded that the carrier concentration would stay steady because two opposite effects compensated with each other.…”

“…Mason et al also asserted that the n-type conductivity of this material is due to the oxygen vacancies expressed with δ in In 2--2x Sn x Zn x O 3--δ [15]. In spite of a wide range of interest and application in indium tin oxide system, co-doping effect on solubility limit and phase development behavior, particularly with different cationic ratio of Sn 4+ and Zn 2+ in In 2 O 3 , has not been dealt with so far.…”

The study of optical properties of amorphous thin films of mixed oxides In2O3—SnO2 system, deposited by co-evaporation

“…It is generally accepted that these free carriers are generated by two mechanisms: (i) Sn atom substitution of In atom, giving out one extra electron and (ii) oxygen vacancy acting as two electrons donor. It has also been proposed by Ambrosini et al [14] that thin films are oxygen deficient. Each vacancy donates two electrons to the carrier concentration.…”

Paramagnetic Meissner Effect in Electrochemically Doped Indium-Tin Oxide Films

“…Searching for superconductivity in thick ITO films (d > 100 nm) Ohyama et al have observed a broad R-T characteristic suggesting that a superconducting transition starts below 3.5 K [21]. Further, Mori [22] reported that under proper annealing conditions, ITO films show sharp superconducting transitions at relatively low temperatures, 2-4 K. Several investigations of zinc-doped ITO have demonstrated the carrier density dependence of superconductivity onset below 3.3 K [23][24][25]. Since the ITO material is well developed and characterized, and thin films of any thickness are readily available in the market, it is a good opportunity to test some controversial phenomena that have appeared in the literature for superconducting oxide films.…”