Variation of the wave-function localization on the monolayer scale in GaSb quantum wells probed by magnetoluminescence

Giugno, P. V.; Convertino, Annalisa; Rinaldi, R.; Cingolani, R.; Massies, J.; Leroux, M.

doi:10.1103/physrevb.52.r11591

Cited by 12 publications

(8 citation statements)

References 2 publications

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“…Their minima correspond rather well to the main peak and to the high-energy shoulder of sample SL2 ͑974 and 993 meV, respectively, to be compared with experimental values of 978 and 996 meV͒. Note that whereas in isolated 10-ML-wide GaSb/Al 0.3 Ga 0.7 Sb quantum wells the ground state is of type L, 24,25 in the shortperiod superlattice, it is ⌫ type, due to the strong interwell coupling induced by the low ⌫ mass in ͑Al,Ga͒Sb ͓m ⌫ (GaSb)ϭ0.04m 0 ͔. We then tentatively assign the main PL peak in SL2 to ⌫Ϫe 1 hh 1 transitions and the high-energy shoulder to weakly populated LϪe 1 hh 1 ones.…”

Section: B Photoluminescence Analysissupporting

confidence: 53%

Al 3p valence and excitonic states in GaSb/Al0.3Ga0.7Sb and GaA

et al. 1997

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Density of states ͑DOS͒ in GaSb/Al 0.3 Ga 0.7 Sb systems are studied by electron-induced x-ray emission spectroscopy ͑EXES͒ and compared to previous results we have obtained for GaAs/Al 0.3 Ga 0.7 As systems. The Al 3p valence DOS are analyzed in the bulk ternary compounds, in heterostructures, and in interfacial zones 30 Å thick, this thickness being equivalent to that of heterostructure layers. Large changes of the Al 3 p valence DOS are seen, depending on the preparation conditions of the samples whose quality was checked by photoluminescence. For heterostructures having a small interface roughness, localization of states on the whole valence band of barriers is evidenced. This localization is attributed to bidimensional effects that largely dominate the interface effects. In contrast, for heterostructures having interfaces of lower quality, interface interaction and localization are competitive. Core excitonic transitions seen by EXES confirm that localization of Al states in the barriers exists for superlattices with abrupt interfaces.

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Section: B Photoluminescence Analysissupporting

confidence: 53%

Al 3p valence and excitonic states in GaSb/Al0.3Ga0.7Sb and GaA

et al. 1997

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“…From the fitting of the optical absorption near the fundamental absorption edge, using GaSb parameters in accordance with those of The excitonic effects that appear in samples 80 and 117 were taken into account by subtracting the exciton binding energy E b from the calculated transition energies. The binding energy of the GaSb confined excitons was calculated by Giugno et al 34 for GaSb/Al 0.31 Ga 0.69 Sb QW's, using GaSb and Al x Ga 1Ϫx Sb parameters in accordance with those of Ref. 6.…”

Section: Discussionmentioning

confidence: 99%

Optical study ofAl0.4Ga0.6Sb/GaSbsingle quantum wells

et al. 1999

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Despite the recent upsurge in research on GaSb-based systems, only few systematic investigations have been performed on the fundamental optical and electronic properties of Al x Ga 1Ϫx Sb/GaSb quantum wells. For this reason we studied a series of Al 0.4 Ga 0.6 Sb/GaSb single quantum wells, with well thicknesses ranging from 40 to 117 Å, by reflectance ͑R͒ and photoreflectance ͑PR͒ in the 0.6 to 1.5 eV spectral range and at temperatures from 6 to 300 K. The structures were grown by molecular-beam epitaxy on ͑001͒ GaSb substrates and structurally and compositionally characterized by photoluminescence, x-ray diffraction, and reflection highenergy electron diffraction. Both R and PR spectra showed clear evidence of the structures associated with the transitions allowed between the nth heavy-͑light-͒ hole subband and the nth conduction subband for nϭ1 and 2. Standard critical-point line shapes fitted satisfactorily the PR structures, allowing accurate determination of both transition energies and broadening parameters as functions of the well thickness. The transition energies were well fitted by a theoretical model based on the envelope-function scheme, thus giving reliable values for the two fit parameters, i.e., the band offset and the conduction-band nonparabolicity. ͓S0163-1829͑99͒05423-5͔ PHYSICAL REVIEW B 15 JUNE 1999-I VOLUME 59, NUMBER 23 PRB 59 0163-1829/99/59͑23͒/15395͑7͒/$15.00 15 395

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“…Roughly speaking, the dependence of the central peak position of the QDs line with B shows two different regimes. 6,7 If the magnetic length lϭͱប/eB is larger than the transverse extension of the exciton wave function ϭͱ͗⌿͉x 2 ϩy 2 ͉⌿͘, the magnetic field produces a diamagnetic shift ⌬Eϭe 2 ͗⌿͉x 2 ϩy 2 ͉⌿͘B 2 /8, where is the exciton reduced mass. In sufficiently large magnetic fields, the magnetic length can become smaller than the exciton radius and the magnetic confinement, rather than the spatial confinement of the excitons, dominates.…”

Section: Resultsmentioning

confidence: 99%

Magneto-optical properties of stacked self-assembled InAs quantum dots

González

Plentz

Köche

et al. 2001

Journal of Applied Physics

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In this article, we report magneto-photoluminescence measurements on stacked self-assembled InAs quantum dots. By applying a magnetic field parallel to the growth direction, we determined the exciton reduced mass and exciton radius from the photoluminescence (PL) peak energy. We observed an asymmetric increase of the full width at half maximum of the quantum dots PL peak to the high-energy side that we associate to the size selectivity of the oscillator strength of the ground state transitions. The observed increase of the integrated intensity of the quantum dots line is explained in terms of the reabsorption of the photons emitted by the GaAs substrate and the InAs wetting layer. These effects are related to the multilayer structure of the sample.

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Variation of the wave-function localization on the monolayer scale in GaSb quantum wells probed by magnetoluminescence

Cited by 12 publications

References 2 publications

Al 3p valence and excitonic states in GaSb/Al0.3Ga0.7Sb and GaA

Al 3p valence and excitonic states in GaSb/Al0.3Ga0.7Sb and GaA

Optical study ofAl0.4Ga0.6Sb/GaSbsingle quantum wells

Magneto-optical properties of stacked self-assembled InAs quantum dots

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