2005
DOI: 10.1021/cm0513637
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Variations in Semiconducting Polymer Microstructure and Hole Mobility with Spin-Coating Speed

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Cited by 230 publications
(261 citation statements)
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“…However, different groups have shown that a strong correlation exists between charge transport and nanomorphology/ crystallinity of the P3HT films [41][42][43][44][45][46][47][48][49] which depend crucially on the thin-film processing conditions. The morphology and crystallinity of P3HT thin films is affected by (i) the thin-film preparation method (drop-casting, spin coating, inkjet printing), (ii) the nature of the substrates and (iii) the macromolecular parameters, for example, average molecular weight, regioregularity and polydispersity (PDI) of the polymer.…”
Section: Morphology and Structure In Thin Filmsmentioning
confidence: 99%
“…However, different groups have shown that a strong correlation exists between charge transport and nanomorphology/ crystallinity of the P3HT films [41][42][43][44][45][46][47][48][49] which depend crucially on the thin-film processing conditions. The morphology and crystallinity of P3HT thin films is affected by (i) the thin-film preparation method (drop-casting, spin coating, inkjet printing), (ii) the nature of the substrates and (iii) the macromolecular parameters, for example, average molecular weight, regioregularity and polydispersity (PDI) of the polymer.…”
Section: Morphology and Structure In Thin Filmsmentioning
confidence: 99%
“…For FETs, although some donor-acceptor copolymers such as poly(diketo pyrrolo-pyrrole-co-thiophene) (PDPP-T) and poly{[N,N9-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bithiophene)} [P(NDI2OD-T2)] display high mobility in spite of a mainly face-on orientation [37,63], the edge-on molecular orientation of chains respect to substrates is favored for most conjugated polymers because of the in-plane π-π pathways wanted by device architecture. The devices with edge-on orientations have a better mobility than those with face-on orientations in examples like P3HT and pBTTT et al [59,64,65]. For high-mobility face-on devices, the origin may be that carriers can successfully overcome barrier near dielectric interface by hopping to at least subsequent 2-3 layers coupled by out-of-plane π-π interaction to achieve a three-dimensional transport [63].…”
Section: Crystallinity and Crystallite Alignmentmentioning
confidence: 99%
“…Literally, "insufficient" means that there is room to reach the optimal state and "excess" means that the optimal state is climbed over followed by a state no better. When tuning the structures and morphology in films, the insufficient driving force such as a fast coating rate [64], a low annealing temperature [38,39], a low annealing solvent vapor pressure [79,159] or a short treatment time [173] could result in the morphology not developing fully reflected by less fibrillar features or more fused shorter nanofibrils, etc. However, a excess treatment such as too slow drying rate [150], too long treatment time [156,173] or too high annealing temperature [38,39] lead to the destruction of the original optimal state reflected by reduced crystallinity, less ordered fibrillar features and fusing of nanofibrils again, etc.…”
Section: Promotion Of Coil-to-rod Transition and Ordered Rod-rod Stacmentioning
confidence: 99%
“…With regard to organic field-effect transistors (OFETs), tailoring the conjugated backbone [1][2][3][4][5][6][7][8][9][10] and the side-chain architecture [11][12][13] , and optimizing the layer morphology [14][15][16][17][18][19][20] raised the performance of these materials to values comparable to that of amorphous silicon, with mobilities in excess of 0.1 cm 2 V À 1 s À 1 . However, for a widespread application of these devices, air stability and material costs are important features that need to be improved.…”
mentioning
confidence: 99%