Variety of iron silicides grown on Si(001) surfaces by solid phase epitaxy: Schematic phase diagram

Nakano, Hiroyuki; Maetani, K.; Hattori, Ken; Daimon, Hiroshi

doi:10.1016/j.susc.2007.04.234

Cited by 17 publications

(19 citation statements)

References 13 publications

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“…The β-FeSi 2 (100)/Si(001) film was prepared using the SPE method in an ultrahigh vacuum (UHV) system equipped with LEED optics (OCI, BDL600IR) and STM (UNISOKU, USM612SA2, and RHK, SPM1000) [11][12][13]. An Si(001) wafer (Sb doped, 0.03 cm) was degassed and flashed at 1250 • C a few tens times with direct-current heating until clear Si(001)-(2 × 1)/(1 × 2) double-domain LEED patterns appeared.…”

Section: Experimental Partmentioning

confidence: 99%

“…The iron-silicide thin films can be prepared using a variety of methods such as solid-phase epitaxy (SPE) [8][9][10][11][12][13], co-deposition by molecular-beam epitaxy [14], reactivity deposition epitaxy [15,16], and high-temperature flash annealing [17]. The iron-silicide film quality and its surface morphology strongly depend on preparation conditions.…”

Section: Introductionmentioning

confidence: 99%

“…Good quality of the film can be achieved with the SPE method. Schematic phase diagrams of iron-silicide films grown by SPE on Si(001) [10][11][12] and Si(111) [13] substrates consist of several different phases with two-dimensional or threedimensional islands on the surfaces.…”

Section: Introductionmentioning

confidence: 99%

“…It was reported that the β-FeSi 2 [010] Si 110 surface is terminated by c(2 × 2)-like [21] or p(2 × 2) reconstructions [21,24]. SPE-grown two-dimensional iron-silicide islands on Si(001) were observed with scanning tunneling microscopy (STM) [11,25,26]. Iron-silicide islands terminated by c(2 × 2)-like protrusions were surrounded by Si(001)-(2 × 1) dimers.…”

Section: Introductionmentioning

confidence: 99%

“…Phase coexistence complicates the surface structure analysis. Therefore, preparation of a single phase thin ironsilicide film is crucial for macroscopic analysis by low-energy electron diffraction (LEED), reflection high-energy electron diffraction (RHEED), XRD, or low-energy ion scattering (LEIS) spectroscopy [11].…”

Section: Introductionmentioning

confidence: 99%

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Surface structure and electronic states of epitaxialβ−FeSi2(100)/Si(001) thin films: Combined quantitative LEED,ab initioDFT, and STM study

et al. 2014

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The surface structure of epitaxial β-FeSi 2 (100) thin film grown on Si(001) was analyzed using the quantitative low-energy electron diffraction intensity-voltage (LEED I-V) method, ab initio density functional theory (DFT) calculations, and scanning tunneling microscopy (STM). LEED patterns measured on the β-FeSi 2 (100) surface reveal two domains of a p(2 × 2) reconstruction with p2gg diffraction symmetry. The iron-silicide film truncation and atomic surface structure were determined by LEED I-V method: The smallest Pendry's reliability factor R P = 0.22 ± 0.02 was achieved for the bare β-FeSi 2 film truncated by an Si layer, whereas Si and Fe ad-atom structures were excluded. Significant atomic relaxations within the topmost surface layers were revealed by the LEED I-V method and confirmed by DFT. The simulated STM patterns from the best-fit model agree well with the measured STM images on the β-FeSi 2 (100)/Si(001)-p(2 × 2) surface: Four Si atoms on a surface form one bright protrusion on STM patterns. Electronic band structure analysis of the bulk and epitaxial β-FeSi 2 (100) was carried out. A bare truncated epitaxial film was found to be metallic. Surface electronic states were identified by a partial k-resolved atomic-orbital based local density-of-state analysis.

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Section: Experimental Partmentioning

confidence: 99%